High Accuracy Instrumentation Amplifier AMP02 FEATURES FUNCTIONAL BLOCK DIAGRAM Low Offset Voltage: 100 V max 8-Lead PDIP and CERDIP 16-Lead SOIC Low Drift: 2 V/ C max Wide Gain Range: 1 to 10,000 High Common-Mode Rejection: 115 dB min 1 8 1 16 RG RG NC NC 1 2 High Bandwidth (G = 1000): 200 kHz typ IN 2 7 V+ RG 2 15 RG 1 2 Gain Equation Accuracy: 0.5% max +IN 3 6 OUT NC 3 14 NC Single Resistor Gain Set V 4 5 REFERENCE IN 4 13 V+ Input Overvoltage Protection 5 12 SENSE +IN Low Cost 6 11 NC OUT Available in Die Form 7 10 V REFERENCE APPLICATIONS 8 9 NC NC Differential Amplifier NC = NO CONNECT Strain Gage Amplifier V+ Thermocouple Amplifier RTD Amplifier 3 7 Programmable Gain Instrumentation Amplifier +IN 1 RG Medical Instrumentation 1 6 R OUT G 8 Data Acquisition Systems RG 2 5 2 + IN 4 REFERENCE V V 50k OUT G = = + 1 () (+IN) (IN) R G FOR SOL CONNECT SENSE TO OUTPUT Figure 1. Basic Circuit Connections GENERAL DESCRIPTION Due to the AMP02s design, its bandwidth remains very high The AMP02 is the first precision instrumentation amplifier over a wide range of gain. Slew rate is over 4 V/s, making the available in an 8-lead package. Gain of the AMP02 is set by a AMP02 ideal for fast data acquisition systems. single external resistor and can range from 1 to 10,000. No A reference pin is provided to allow the output to be referenced gain set resistor is required for unity gain. The AMP02 includes to an external dc level. This pin may be used for offset correc- an input protection network that allows the inputs to be taken tion or level shifting as required. In the 8-lead package, sense is 60 V beyond either supply rail without damaging the device. internally connected to the output. Laser trimming reduces the input offset voltage to under 100 V. For an instrumentation amplifier with the highest precision, Output offset voltage is below 4 mV, and gain accuracy is better consult the AMP01 data sheet. than 0.5% for a gain of 1000. ADIs proprietary thin-film resis- tor process keeps the gain temperature coefficient under 50 ppm/C. REV. E Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. may result from its use. No license is granted by implication or otherwise Tel: 781/329-4700 www.analog.com under any patent or patent rights of Analog Devices. Trademarks and Fax: 781/326-8703 Analog Devices, Inc., 2002. All rights reserved. registered trademarks are the property of their respective companies.AMP02SPECIFICATIONS ELECTRICAL CHARACTERISTICS ( V = 15 V, V = 0 V, T = 25 C, unless otherwise noted.) S CM A AMP02E AMP02F Parameter Symbol Conditions Min Typ Max Min Typ Max Unit OFFSET VOLTAGE Input Offset Voltage V T = 25C20 100 40 200 V IOS A 40C T +85C50 200 100 350 V A Input Offset Voltage Drift TCV 40C T +85C 0.5 2 1 4 V/C IOS A Output Offset Voltage V T = 25C14 28mV OOS A 40C T +85C410 920mV A Output Offset Voltage Drift TCV 40C T +85C50 100 100 200 V/C OOS A Power Supply Rejection PSR V = 4.8 V to 18 V S G = 100, 1000 115 125 110 115 dB G = 10 100 110 95 100 dB G = 1 80 90 75 80 dB V = 4.8 V to 18 V S 40C T +85C A G = 1000, 100 110 120 105 110 dB G = 10 95 110 90 95 dB G = 1 75 90 70 75 dB INPUT CURRENT Input Bias Current I T = 25C210 420nA B A Input Bias Current Drift TCI 40C T +85C 150 250 pA/C B A Input Offset Current I T = 25C 1.2 5 2 10 nA OS A Input Offset Current Drift TCI 40C T +85C9 15 pA/C OS A INPUT Input Resistance R Differential, G 1000 10 10 G IN Common Mode, G = 1000 16.5 16.5 G 1 Input Voltage Range IVR T = 25C 11 11 V A Common-Mode Rejection CMR V = 11 V CM G = 1000, 100 115 120 110 115 dB G = 10 100 115 95 110 dB G = 1 80 95 75 90 dB V = 11 V CM 40C T +85C A G = 100, 1000 110 120 105 115 dB G = 10 95 110 90 105 dB G = 1 75 90 70 85 dB GAIN Gain Equation G = 1000 0.50 0.70 % 50 k Accuracy G = +1 G = 100 0.30 0.50 % R G G = 10 0.25 0.40 % G = 1 0.02 0.05 % Gain Range G 1 10k 1 10k V/V Nonlinearity G = 1 to 1000 0.006 0.006 % 2, 3 Temperature Coefficient G 1 G 1000 20 50 20 50 ppm/C TC OUTPUT RATING Output Voltage Swing V T = 25C, R = 1 k 12 13 12 13 V OUT A L R = 1 k , 40C T +85C 11 12 11 12 V L A Positive Current Limit Output-to-Ground Short 22 22 mA Negative Current Limit Output-to-Ground Short 32 32 mA NOISE Voltage Density, RTI e f = 1 kHz n O G = 1000 9 9 nV/Hz G = 100 10 10 nV/Hz G = 10 18 18 nV/Hz G = 1 120 120 nV/Hz Noise Current Density, RTI i f = 1 kHz, G = 1000 0.4 0.4 pA/Hz n O Input Noise Voltage e p-p 0.1 Hz to 10 Hz n G = 1000 0.4 0.4 V p-p G = 100 0.5 0.5 V p-p G = 10 1.2 1.2 V p-p DYNAMIC RESPONSE Small-Signal Bandwidth BW G = 1 1200 1200 kHz (3 dB) G = 10 300 300 kHz G = 100, 1000 200 200 kHz Slew Rate SR G = 10, R = 1 k 46 4 6 V/s L Settling Time t To 0.01% 10 V Step S G = 1 to 1000 10 10 s SENSE INPUT Input Resistance R 25 25 k IN Voltage Range 11 11 V REFERENCE INPUT Input Resistance R 50 50 k IN Voltage Range 11 11 V Gain to Output 11 V/V 2 REV. 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