DS1250Y-100IND+ Analog Devices

DS1250Y-100IND+ electronic component of Analog Devices
DS1250Y-100IND+ Analog Devices
DS1250Y-100IND+ NVRAM
DS1250Y-100IND+  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DS1250Y-100IND+ NVRAM across the USA, India, Europe, Australia, and various other global locations. DS1250Y-100IND+ NVRAM are a product manufactured by Analog Devices. We provide cost-effective solutions for NVRAM, ensuring timely deliveries around the world.

Part No. DS1250Y-100IND+
Manufacturer: Analog Devices
Category: NVRAM
Description: NVRAM 4096K NV SRAM
High-temperature precision, low-offset current shunt monitor with DSP interface.
Datasheet: DS1250Y-100IND+ Datasheet (PDF)
Price (USD)
1: USD 140.4018 ea
Line Total: USD 140.4 
Availability : 0
  
QtyUnit Price
1$ 140.4018
11$ 121.5416
22$ 118.8641
55$ 117.4586
110$ 113.7877

Availability 0
Ship by Thu. 20 Nov to Mon. 24 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 140.4018
11$ 121.5416
22$ 118.8641
55$ 117.4586
110$ 113.7877

   
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We are delighted to provide the DS1250Y-100IND+ from our NVRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DS1250Y-100IND+ and other electronic components in the NVRAM category and beyond.

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The Analog Devices DS1250Y-100IND+ is a nonvolatile static RAM (SRAM) memory chip with a battery-backed lithium energy source. It features a total capacity of 256K x 8 bits, operates at 3 V and has an access time of 100 ns. The battery-backed RAM supports write protection of its memory contents against unexpected power loss and inadvertent writes. It is ideal for data storage in applications such as instrumentation, automation, and control systems. The DS1250Y-100IND+ also includes a unique feature which allows it to automatically switch over from battery to Vcc power if its battery power fails or is removed. This makes it an ideal solution for applications which need to have data preserved even if the main power source is lost.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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