Product Information

MAX2150ETI+

MAX2150ETI+ electronic component of Analog Devices

Datasheet
Maxim Integrated Modulator Demodulator IQ Mod wSig Delt Fractional-N Synth

Manufacturer: Analog Devices
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 26.0442 ea
Line Total: USD 26.04

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 60
Multiples : 60

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MAX2150ETI+
Analog Devices

60 : USD 14.0586
120 : USD 13.3055
240 : USD 13.1148
360 : USD 12.924
480 : USD 12.7332
600 : USD 12.5425
6000 : USD 12.3517

0 - WHS 2


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1

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MAX2150ETI+
Analog Devices

1 : USD 26.0442
10 : USD 23.9526
25 : USD 22.0864
120 : USD 19.4452
300 : USD 18.4881
540 : USD 17.8944
1020 : USD 17.3007

     
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Click here to ask about the production status of specific part numbers. MAX2150 Wideband I/Q Modulator with Sigma-Delta Fractional-N Synthesizer General Description Features The MAX2150 is a complete wideband direct upcon- Single Voltage Supply (2.7V to 3.6V) version quadrature modulator IC incorporating a 28-bit 75MHz 3dB I/Q Input Bandwidth sigma-delta fractional-N synthesizer. The device is target- Wideband 50 RF Output: 700MHz to 2300MHz ed for applications in the 700MHz to 2300MHz frequency range. Ultra-Fine Frequency Resolution: 100mHz The super-high-resolution sigma-delta fractional-N High Reference Frequency for Fast-Switching Applications synthesizer is capable of better than 50mHz resolution when used with a 10MHz reference. Other features: fully Ultra-Low Phase Noise differential I/Q modulation inputs, an internal LO buffer, Low Spurious and Reference Emissions and a 50 wideband output driver amplifier. -1dBm RMS Output Power A standard 3-wire interface is provided for synthesizer 60dB RF Muting Control programming and overall device configuration. An on-chip low-noise crystal oscillator amplifier is also included and 34dBc Typical Carrier Suppression can be configured as a buffer when an external reference 34dBc Typical Sideband Suppression oscillator is used. Software- and Hardware-Controlled Shutdown Modes The device typically achieves 34dBc of carrier and side- band suppression at a -1dBm output level. The wide- Ordering Information band, internally matched RF output can also be disabled while the synthesizer and 3-wire bus remain powered up PART TEMP RANGE PIN-PACKAGE for continuous programming. MAX2150ETI -40C to +85C 28 TQFN-EP* The device consumes 72mA from a single +3.0V supply MAX2150ETI+ -40C to +85C 28 TQFN-EP* and is packaged in an ultra-compact 28-pin QFN package *EP = Exposed paddle. (5mm x 5mm) with an exposed pad. +Denotes lead-free package. Applications Wireless Broadband Pin Configuration/ Satellite Uplink Functional Diagram LMDS Wireless Base Station VCC RF I+ I- Q+ Q- BUFEN BUFOUT LO+ TXEN VCC PA LO- 0 RFOUT VCC LO 90 N.C. VCC D MAX2150 N.C. 1/N VCC A MOD LOCK CHP PFD CHP 1/R PROGRAMMING VCC SD VCC CHP AND CONTROL EN CLK DATA SHDN SYNEN OSCIN VCC XTAL QFN 19-2389 Rev 5 6/21 28 27 26 25 24 23 22 1 21 2 20 3 19 4 18 5 17 6 16 7 15 8 9 10 11 12 13 14MAX2150 Wideband I/Q Modulator with Sigma-Delta Fractional-N Synthesizer Absolute Maximum Ratings V to GND .........................................................-0.3V to +6.0V Continuous Power Dissipation CC RF Signals: LO+, LO-, OSCIN .......................................+10dBm 28-Pin TQFN (T = +70C).................................................2W A I+ to I-, Q+ to Q- ......................................................................2V (derate 28.5mW/C above +70C) LO+, LO-, I+, I-, Q+, Q-, BUFEN, TXEN, CLK, DATA, Operating Temperature Range ........................... -40C to +85C EN, SYNEN, OSCIN, OSCOUT, BUFOUT, CHP, Junction Temperature Range ..........................................+150C SHDN, LOCK, V CP to GND .......... -0.3V to (V + 0.3V) Storage Temperature ........................................ -65C to +150C CC CC Digital Input Current .........................................................10mA Lead Temperature (soldering 10s) ..................................+300C Short-Circuit Duration RFOUT, BUFOUT, OSCOUT, Lock, CHP...........................................................................10s Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. CAUTION ESD SENSITIVE DEVICE DC Electrical Characteristics (MAX2150 EV kit. V = +2.7V to +3.6V, GND = 0V, SHDN = PLLEN = TXEN = high, BUFEN= low. No AC input signals. RFOUT and CC BUFOUT output ports are terminated in 50. T = -40C to +85C. Typical values are at V = +3V, T = +25C, unless otherwise A CC A noted.) (Note 1) PARAMETER CONDITIONS MIN TYP MAX UNITS SUPPLY Supply Voltage 2.7 3 3.6 V TX mode, SHDN = PLLEN = TXEN = high 72 107 BUFEN = low SYNTH mode, SHDN = PLLEN = high, Supply Current 25 38 mA TXEN = BUFEN = low MOD mode, SHDN = TXEN = high, 46 69 SYNEN = BUFEN = low LO Buffer Supply Current Additional current in all modes for BUFEN = high 3.3 5.5 mA HW SHDN mode, SHDN = low 0.3 600 Shutdown Supply Current A SW SHDN mode, PWDN bit at logic low 35 600 CONTROL INPUT/OUTPUTS (SHDN, TXEN, SYNEN, BUFEN) Input Logic High 2 V Input Logic Low 0.5 V Input Logic High Current 1 A Input Logic Low Current -1 A Lock Detect High (Locked) 2 V Lock Detect Low (Unlocked) 0.5 V Power-Up Time MOD mode 25 s Power-Down Time MOD mode 1 s 3-WIRE CONTROL INPUT (CLK, DATA, EN) Input Logic High V - 0.5 V CC Input Logic Low 0.5 V Input Logic High Current 1 A Input Logic Low Current -1 A Maxim Integrated 2 www.maximintegrated.com

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