Product Information

75.073AR.G04

75.073AR.G04 electronic component of Apacer

Datasheet
Memory Modules 1G DDR2 200P 667MHz SODIMM IND TEMP

Manufacturer: Apacer
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 101.7804
10 : USD 92.6359
25 : USD 92.0974
50 : USD 90.1608
100 : USD 84.817
250 : USD 84.2888
500 : USD 83.5639
1000 : USD 80.2396
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Memory Size
Memory Type
Speed
Operating Supply Voltage
Maximum Operating Temperature
Number of Pins
Packaging
Brand
Minimum Operating Temperature
Product Type
Factory Pack Quantity :
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Apacer Memory Product Specification 1024MB DDR2 SDRAM SO-DIMM 1024MB DDR2 SDRAM SO-DIMM based on 128Mx8 ,8Banks, 1.8V DDR2 SDRAM with SPD Features Performance range ( Bandwidth: 5.3 GB/sec ) Part Number Max Freq. (Clock) Speed Grade 75.073AR.G04 333MHz(3ns CL5) 667Mbps JEDECstandard 1.8V 0.1V Power Supply VDDQ = 1.8V 0.1V Internal Bank: 8 Bank Posted CAS Programmable CAS Latency: 3, 4, 5 Programmable Additive Latency: 0, 1 , 2 , 3 and 4 Write Latency(WL) = Read Latency(RL) -1 Burst Length: 4 , 8(Interleave/nibble sequential) Programmable Sequential / Interleave Burst Mode Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature) Off-Chip Driver(OCD) Impedance Adjustment On Die Termination Refresh and Self Refresh Average Refesh Period 7.8us Serial presence detect with EEPROM Compliance with RoHS Compliance with CE Operating Temperature Rang: Commercial 0C TC 85C Industrial -40C TC 95C -40C TA 85C Refresh: auto-refresh, self-refresh Average refresh period 7.8us at 0C TC 85C 3.9us at 85C TC 95CApacer Memory Product Specification Description This module is 128M bit x 64 x1Rank Double Data Rate SDRAM high density memory modules based on first generation of 1024MB DDR2 SDRAM respectively. It consists of eight CMOS 128M x 8 bit with 8banks Double Data Rate SDRAMs in 60Ball FBGA packages mounted on a 200pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each DDR2 SDRAM. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable latencies and burst lengths allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Industrial Temperature The industrial temperature option, if offered, has two simultaneous requirements: ambient temperature surrounding the device cannot be less than 40C or greater than +85C, and the case temperature cannot be less than 40C or greater than +95C. JEDEC specifications require the refresh rate to double when TC exceeds +85C this also requires use of the high-temperature self refresh option. Notes: MAX operating case temperature TC is measured in the center of the package Device functionality is not guaranteed if the device exceeds maximum TC during operation. Both temperature TA and TC specifications must be satisfied. Operating ambient temperature surrounding the package.

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

8542.32.00 33 No ..Memory cards (other than ""smart"" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
Apacer
Apacer Memory America

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