AP4525GEH APEC

AP4525GEH electronic component of APEC
AP4525GEH APEC
AP4525GEH MOSFETs
AP4525GEH  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of AP4525GEH MOSFETs across the USA, India, Europe, Australia, and various other global locations. AP4525GEH MOSFETs are a product manufactured by APEC. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. AP4525GEH
Manufacturer: APEC
Category: MOSFETs
Description: TO-252-4L MOSFETs ROHS
Datasheet: AP4525GEH Datasheet (PDF)
Price (USD)
5: USD 0.6874 ea
Line Total: USD 3.44 
Availability : 0
  
QtyUnit Price
5$ 0.6874
50$ 0.4082
150$ 0.3277
500$ 0.2765
3000$ 0.2538
6000$ 0.2407

Availability 0
Ship by Wed. 03 Sep to Mon. 08 Sep
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.6874
50$ 0.4082
150$ 0.3277
500$ 0.2765
3000$ 0.2538
6000$ 0.2407

   
Manufacturer
Product Category
Rohs
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We are delighted to provide the AP4525GEH from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AP4525GEH and other electronic components in the MOSFETs category and beyond.

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The AP4525GEH with TO-252-4L MOSFETs, ROHS manufactured by APEC is a low power P-channel MOSFET with an RDS(on) of up to 4.5m? at 4.5V. The package type is TO-252-4L, which is suitable for SMD soldering and the package meets the ROHS requirements. The MOSFET also features a 20V drain-source breakdown voltage, -55/+150°C junction temperature range, and an operating temperature range from -55°C to 125°C. It is typically used for a variety of switching and power management applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
ADVANCED POWER ELECTRONICS
ADVANCED POWER ELECTRONICS CORP
APEC(Advanced Power Elec)
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