POGEE SEMICONDUCTOR AP54RHC506 Radiation Hardened 5-channel Bus Transceiver with cold sparing Extended operating temperature range (-55C to 1 GENERAL DESCRIPTION +125C) The AP54RHC506 is a radiation-hardened by design 5- Proprietary cold-sparing capability with zero bit bus transceiver with 3-state outputs that is ideally static power penalty suited for space, medical imaging and other applica- tions demanding radiation tolerance and high reliabil- Built-in triple redundancy for enhanced reliabil- ity. It is fabricated in a 180 nm CMOS process utilizing ity proprietary radiation-hardening techniques, delivering high resiliency to single-event e ects (SEE) and to a to- Internal power-on reset (POR) circuitry ensures tal ionizing dose (TID) up to 30 krad (Si). reliable power up and power down responses during hot plug and cold sparing operations This device is a member of the Apogee Semiconductor AP54RHC logic family operating across a voltage supply Tri-state output drivers range of 1.65Vto5.5V. Class 2 ESD protection (4000 V HBM, 500 V CDM) An output enable control pin allows all bu ers to be TID resilience of 30krad(Si) placed in a high impedance (high-Z) state, simplify- ing usage in applications with shared busses or mixed 2 SEL resilient up to LET of 80MeV-cm /mg power domains. A direction control pin is used to de- termine whether data ow is A B or B A. 1.2 LOGIC DIAGRAM Zero-power penalty cold-sparing is supported, along with Class 2 ESD protection on all inputs and outputs. The AP54RHC506 logic function is shown below: A proprietary output stage and robust power-on reset (POR) circuit allow the AP54RHC506 to be cold-spared CC in any redundant conguration with no static power V loss on any pad of the device. The redundant out- 14 1 put stage also features a high drive capability with low DIR static power loss. 8 EN The AP54RHC506 also features a triple-redundant de- 13 B1 sign throughout its entire circuitry, which allows it to 2 A1 be immune to single-event transients (SET) without re- 12 B2 quiring additional redundant devices. 3 A2 11 B3 Ordering information may be found in Table 9 on Page 4 A3 12. 10 B4 5 A4 9 B5 1.1 FEATURES 6 A5 7 1.65VDCto5.5VDC operation GND Inputs tolerant up to 5.5 VDC at any V CC Provides logic-level down translation to V CC Figure 1: AP54RHC506 logic diagram COPYRIGHT 2021 APOGEE SEMICONDUCTOR REVISED: 2021-07-30 DOC ID: 601-000-028-A04 (SUBMIT DOCUMENTATION FEEDBACK) 1 / 13AP54RHC506 Rad-Hard 5-channel Bus Transceiver POGEE SEMICONDUCTOR DATASHEET with cold sparing CONTENTS 1 General Description 1 5.6 Characteristics Measurement Information 8 1.1 Features 1 6 Detailed Description 9 1.2 Logic Diagram . 1 7 Applications Information 10 2 Acronyms and Abbreviations 2 7.1 Use in Cold-Sparing Conguration . 10 3 Logic Data 3 7.2 Power Supply Recommendations . 10 7.3 Application Tips . 10 4 Pin Conguration 3 8 Packaging Information 11 5 Electrical Characteristics 4 5.1 Absolute Maximum Ratings . 4 9 Ordering Information 12 5.2 Recommended Operating Conditions . 5 5.3 Static Characteristics 6 10 Revision History 12 5.4 Dynamic Characteristics . 7 5.5 Radiation Resilience . 7 11 Legal 13 LIST OF TABLES 1 Truth Table 3 6 DC Electrical Characteristics 6 2 Device Pinout . 3 7 AC Electrical Characteristics 7 3 Absolute Maximum Ratings . 4 8 Radiation Resilience Characteristics . 7 4 Recommended Operating Conditions . 5 9 Ordering Information 12 5 Thermal Information . 5 LIST OF FIGURES 1 AP54RHC506 logic diagram . 1 6 Input Pin Structure 9 2 Device Pinout . 3 7 Output Pin Structure . 9 3 Load Circuit 8 8 Cold Spare Example . 10 4 Propagation Delay 8 9 Package Mechanical Drawing 11 5 Enable and Disable Timing . 8 10 Part Number Decoder 12 2 ACRONYMS AND ABBREVIATIONS ESD Electrostatic Discharge POR Power On Reset RHA Radiation Hardness Assurance SEE Single Event E ects SEL Single Event Latchup SET Single Event Transient TID Total Ionizing Dose TMR Triple Modular Redundancy CDM Charged-device Model HBM Human-body Model COPYRIGHT 2021 APOGEE SEMICONDUCTOR REVISED: 2021-07-30 DOC ID: 601-000-028-A04 (SUBMIT DOCUMENTATION FEEDBACK) 2 / 13