TISP4C115H3BJ THRU TISP4C350H3BJ LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4CxxxH3BJ Overvoltage Protector Series Ion-Implanted Breakdown Region Agency Recognition - Precise and Stable Voltage - Low Voltage Overshoot under Surge Description - Low Off-State Capacitance UL File Number: E215609 V V DRM (BO) Device Name V V SMB Package (Top View) TISP4C115H3BJ 90 115 TISP4C125H3BJ 100 125 TISP4C145H3BJ 120 145 R1 2T TISP4C165H3BJ 135 165 TISP4C180H3BJ 145 180 TISP4C220H3BJ 180 220 MD-SMB-004-a TISP4C250H3BJ 190 250 TISP4C290H3BJ 220 290 Device Symbol TISP4C350H3BJ 275 350 T Rated for International Surge Wave Shapes I PPSM Wave Shape Standard A 2/10 GR-1089-CORE 500 10/160TIA-968-A200 R 10/700ITU-T K.20/21/45 150 SD-TISP4xxx-001-a 10/560TIA-968-A100 10/1000 GR-1089-CORE100 ................................................... UL Recognized Component Description This device is designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground). The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current hellps prevent d.c. latchup as the diverted current subsides. Please contact your Bourns representative if the protection voltage you require is not listed. How to Order Marking Device Package Carrier Order As Code Std. Qty. TISP4CxxxH3BJ SMB Embossed Tape Reeled TISP4CxxxH3BJR-S 4CxxxH 3000 Insert xxx corresponding to device name. SEPTEMBER 2004 REVISED JULY 2019 *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. WARNING Cancer and Reproductive Harm The products described herein and this document are subject to specific legal disclaimers as set forth on the last www.P65Warnings.ca.gov page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP4CxxxH3BJ Overvoltage Protector Series Absolute Maximum Ratings, T = 25 C (Unless Otherwise Noted) A RatingSymbol ValueUnit 4C115H3BJ 90 4C125H3BJ 100 4C145H3BJ 120 4C165H3BJ 135 Repetitive peak off-state voltage 4C180H3BJ 145 V V DRM 4C220H3BJ 180 4C250H3BJ 190 4C290H3BJ 220 4C350H3BJ 275 Non-repetitive peak impulse current (see Notes 1 and 2) 2/10 s(GR-1089-CORE, 2/10 s voltage wave shape) 500 10/160 s (TIA-968-A, 10/160 s voltage wave shape) 200 5/310 s (ITU-T K.44, 10/700 s voltage wave shape used in K.20/21/45) I 150 A PPSM 10/560 s (TIA-968-A, 10/560 s voltage wave shape) 100 10/1000 s(GR-1089-CORE, 10/1000 s voltage wave shape) 100 Non-repetitive peak on-state current (see Notes 1, 2 and 3) 30 20 ms, 50 Hz (full sine wave) I A TSM 2.1 1000 s, 50 Hz Junction temperature T -40 to +150 C J Storage temperature range T -65 to +150 C stg NOTES: 1. Initially the device must be in thermal equilibrium with T = 25 C. J 2. The surge may be repeated after the device returns to its initial conditions. 3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. Electrical Characteristics, T = 25 C (Unless Otherwise Noted) A Parameter Test Conditions MinTyp MaxUnit T = 25 C 5 A I Repetitive peak off-state current V = V A DRM D DRM T = 85 C 10 A 4C115H3BJ 115 4C125H3BJ 125 4C145H3BJ 145 4C165H3BJ 165 4C180H3BJ 180 V Breakover voltage dv/dt=250 V/ms, R =300 V (BO) SOURCE 4C220H3BJ 220 4C250H3BJ 250 4C290H3BJ 290 4C350H3BJ 350 4C115H3BJ 125 4C125H3BJ 135 4C145H3BJ 155 4C165H3BJ 175 dv/dt 1000 V/s, Linear voltage ramp, 4C180H3BJ 190 Maximum ramp value = 500V V V Impulse breakover voltage 4C220H3BJ 230 (BO) di/dt = 10 A/s, Linear current ramp, 4C250H3BJ 260 Maximum ramp value=10 A 4C290H3BJ 300 4C350H3BJ 360 I Breakover current dv/dt=250 V/ms, R =300600 mA (BO) SOURCE V On-state voltage I =5A, t = 100 s 3V T T w I Holding current I =5A, di/dt=30 mA/ms 150 600mA H T 4C115H3BJ 50 4C125H3BJ 4C145H3BJ 4C165H3BJ 4C180H3BJ 45 C Off-state capacitance f = 1MHz, V = 1 V rms, V = -2 V O d D 4C220H3BJ pF 4C250H3BJ 4C290H3BJ 40 4C350H3BJ SEPTEMBER 2004 REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.