4Cx ABA-54563 3.4 GHz Broadband Silicon RFIC Amplifier Data Sheet Description Features Avagos ABA-54563 is an economical, easy-to-use internally Single +5V Supply 50-ohm matched silicon monolithic amplifier that offers High linearity excellent gain and broadband response from DC to VSWR < 1.4 throughout operating frequency 3.4 GHz. Packaged in an ultraminiature industry-standard SOT-363 package, it requires half the board space of a Miniature SOT363 (SC70) Package SOT-143 package. Unconditionally stable At 2 GHz, the ABA-54563 offers a small-signal gain of 23 dB, Lead-free output P1dB of 16.1 dB and 27.8 dBm output third order Typical Performance at +5V/79 mA intercept point. It is suitable for use as buffer amplifiers for wideband applications. They are designed for low 2 GHz cost gain blocks in cellular applications, DBS tuners, LNB 23 dB Gain and other wireless communications systems. 27.8 dBm OIP3 At IF frequencies, the ABA-54563 offers good linearity 16.1 dBm P 1dB performance with a typical OIP3 of 35 dBm at 200 MHz. 4.4 dB Noise Figure ABA-54563 is fabricated using Avagos HP25 silicon 200 MHz bipolar process, which employs a double-diffused single 23 dB Gain polysilicon process with self-aligned submicron emitter 35 dBm OIP3 geometr y. The process is capable of simultaneous high f and high NPN breakdown (25 GHz f at 6V BVCEO). The T T 18 dBm P 1dB process utilizes industry standard device oxide isolation 3.6 dB Noise Figure technologies and submicr on aluminum multilayer interconnect to achieve superior performance, high uniformity and proven reliability. Surface Mount Package: SOT-363 /SC70 Simplified Schematic RF Vcc Output & Vcc RF Input Pin Connections and Package Marking Ground 1 Output GND 2 & Vcc Ground 3 Ground 2 GND 1 GND 3 Input Vcc Note: Top View. Package marking provides orientation and identification. x is character to identify date code.4Cx 1 ABA-54563 Absolute Maximum Ratings Symbol Parameter Units Absolute Max. Notes: V Device Voltage, RF output to ground (T = 25C) V 6 1. Operation of this device in excess of any cc of these limits may cause permanent P CW RF Input Power dBm 20 in damage. 3 2. Thermal resistance measured using 150C P Total Power Dissipation mW 560 diss Liquid Crystal Measurement method. 2 Thermal Resistance C/W 110 j-c 3. Case temperature Tc at 25C. Derate at 9.1mW/C for Tc > 87.5C. T Junction Temperature C 150 j T Storage Temperature C -65 to 150 STG 1 Product Consistency Distribution Charts at 5.0 V and 2 GHz. 120 100 80 100 80 60 80 60 60 40 40 40 20 20 20 0 0 0 3.6 4 4.4 4.8 5.2 15.3 15.6 15.9 16.2 16.5 16.8 21.8 22.2 22.6 23 23.4 23.8 NF (dB) S21 (dB) P1dB (dBm) Figure 3. Noise Figure Distribution. Figure 1. S21 Distribution. Figure 2. P1dB Distribution. 80 C block 60 1 nF RF Output 40 RFC 33 nH 20 RF Input Vcc C block C C bypass bypass 0 1 nF 100 pF 1000 pF 26.5 27 27.5 28 28.5 29 OIP3 (dBm) Figure 5. Test circuit at of the 2 GHz production test board used for NF, Gain and OIP3 Figure 4. OIP3 Distribution. measurements. Circuit losses have been de-embedded from actual measurements. Note: 1. Measured on the production test circuit base on 500 samples. 2 FREQUENCY FREQUENCY FREQUENCY FREQUENCY