Product Information

AFBR-S4N44C013

AFBR-S4N44C013 electronic component of Broadcom

Datasheet
Photodiodes SiPM CSP 4x4mm 30um NUVHD

Manufacturer: Broadcom
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

240: USD 16.6828 ea
Line Total: USD 4003.87

0 - Global Stock
MOQ: 240  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Wed. 01 May to Tue. 07 May

MOQ : 500
Multiples : 500

Stock Image

AFBR-S4N44C013
Broadcom

500 : USD 21.241

0 - Global Stock


Ships to you between Tue. 07 May to Thu. 09 May

MOQ : 1
Multiples : 1

Stock Image

AFBR-S4N44C013
Broadcom

1 : USD 32.5391
10 : USD 25.4865

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Peak Wavelength
Package / Case
Mounting Style
Dark Current
Minimum Operating Temperature
Maximum Operating Temperature
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Data Sheet AFBR-S4N44C013 NUV-HD Single Silicon Photo Multiplier Description Features The Broadcom AFBR-S4N44C013 is a silicon photo High PDE of more than 55% at 420 nm multiplier (SiPM) used for ultra-sensitive precision High fill factors measurement of single photons.The active area is 3.72 Excellent SPTR and CRT 2 3.72 mm . High packing density of the single chip is Excellent uniformity of breakdown voltage, 180 mV achieved using through-silicon-via (TSV) technology. Larger (3 sigma) areas can be covered by tiling multiple AFBR-S4N44C013 Excellent uniformity of gain almost without any edge losses. The passivation layer is With TSV technology (4-side tilable) made by a glass highly transparent down to UV 2 Size 3.88 3.88 mm wavelengths, resulting in a broad response in the visible 2 Cell pitch 30 30 m light spectrum with high sensitivity towards blue- and Highly transparent glass protection layer near-UV region of the light spectrum. The SiPM is best Operating temperature range from 20C to +50C suited for the detection of low-level pulsed light sources, RoHS and REACH compliant especially for detection of Cherenkov- or scintillation light from the most common organic (plastic) and inorganic Applications scintillator materials (for example, LSO, LYSO, BGO, NaI, CsI, BaF, LaBr). This product is lead free and compliant with X-ray and gamma ray detection RoHS and REACH. Gamma ray spectroscopy Safety and security Block Diagram Nuclear medicine Positron emission tomography Figure 1: AFBR-S4N44C013 Block Diagram Life sciences Flow cytometry Fluorescence luminescence measurements Time correlated single photon counting High energy physics Astrophysics Broadcom AFBR-S4N44C013-DS102 May 6, 2019AFBR-S4N44C013 Data Sheet NUV-HD Single Silicon Photo Multiplier Pad Layout and Soldering Ball Geometry Figure 2: Bottom View (Left) and Cross Sections (Right) 0.6 Back Side 0.3 Pin 1 0.49 0.97 0.97 0.97 D-D Sensorsurface D C A A C Glasssurface D NOTES: 1) Dimensions areinmillimeters. 2) Nominal values rounded to two decimal places - Suppression of following zeros. 3) A is anode, C is cathode. Reflow Soldering Diagram Figure 3: Recommended Reflow Soldering Profile 300 C max 245C 250 217C liquidus 200 150 pre-heat soak reflow 100 50 90...120s < 1 K/s 0 0 50 100 150 200 250 300 350 400 s Broadcom AFBR-S4N44C013-DS102 2 3.88 0.49 09. 7 0.97 0.97 0.36

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
 AVAGO TECHNOLOGIES
AV4
AV9
Avago
AVAGO TECHNOLOGIES
Avago Technologies US Inc.
AVAGO(Broadcom)
Broadcom Avago
BROADCOM (AVAGO)
Broadcom / Avago
BROADCOM CORPORATION
Broadcom Limited
PLX Technology Avago
PLX Technology / Avago

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