AMMP-5618 620 GHz General Purpose Amplifier Data Sheet Description Features 5 x 5 mm surface mount package Avagos AMMP-5618 is a high power, medium gain amplifier that operates from 6 GHz to 20 GHz. The Broad band performance 620 GHz amplifier is designed to be an easy-to-use component High +19 dBm output power for any surface mount PCB application. In c ommunication Medium 13 dB typical gain systems, it can be used as a LO buffer, or as a transmit 50 input and output match driver amplifier. During typical operation with a single 5V supply, each gain stage is biased for Class-A operation Single 5V (107 mA) supply bias for optimal power output with minimal distortion. The Applications amplifier has integrated 50 I/O match, DC blocking, self-bias and choke to eliminate complex tuning and Microwave radio systems assembly processes typically required by hybrid (discrete- Satellite VSAT FET) a mpliefi rs. The package is fully SMT compatible with backside grounding and I/O to simplify assembly. Commercial grade military Note: These devices are ESD sensitive. The following pre- cautions are strongly recommended. Ensure that an ESD approved carrier is used when dice are transported from one destination to another. Personal grounding is to be worn at all times when handling these devices. Package Diagram Functional Block Diagram NC Vd NC Pin Function 1 2 3 1 NC 1 2 3 2 Vd 3 NC 8 4 4 RF out RF IN 8 4 RF OUT 5 NC 6 NC 7 6 5 7 NC 8 RF in 7 6 5 NC NC NC Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) = 50V ESD Human Body Model (Class 0) = 150V Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control.Electrical Specifications 1. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25C, Vd=5V, Idq=107mA. 2. Pre-assembly into package performance verified 100% on-wafer per AMMC-5618 published specifications 3. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies 4. Specifications are derived from measurements in a 50 test environment. Aspects of the amplifier performance may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (opt) matching. Table 1. RF Electrical Characteristics (T = 25C, V = 5.0V, I =107 mA, Zo=50 ) A d dq Parameter Typ. Sigma Unit Frequency Small-signal Gain, Gain 12 0.40 dB 5-6 GHz 13 Noise Figure into 50 , NF 4.4 0.2 dB Output Power at 1dB Gain Compression, P1dB 19 0.9 dBm Third Order Intercept Point 25 1.2 dBm 5-6 GHz f=100MHz Pin=-20dBm, OIP3 30 Input Return Loss, RLin -12 0.7 dB Output Return Loss, Rlout -12 0.6 dB Reverse Isolation, Isolation -40 1.2 dB Table 2. Recommended Operating Range 1. Ambient operational temperature T = 25C unless otherwise noted. A 2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34C) as measured using infrared microscopy. Thermal Resistance at backside temperature (Tb)= 25C calculated from measured data. Specifications Description Min. Typical Max. Unit Comments Drain Supply Current, Id 107 140 mA (Vd = 5 V, Under any RF power drive and temperature Table 3. Thermal Properties Parameter Test Conditions Value Thermal Resistance, q Backside Temperature, T =25C q = 34 C/W ch-b A ch-b Absolute Minimum and Maximum Ratings Table 4. Minimum and Maximum Ratings Specifications Description Min. Max. Unit Comments Positive Drain Voltage, Vd 7 V Drain Current, Id 150 mA RF Input Power (Pin), RFin 20 dBm CW Channel Temperature, Tch +150 C Storage Temperature, Tstg -65 +150 C Max. Assembly Temp, Tmax +300 C 30 second maximum Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. 2