MGA-31589 0.5 W High Gain Driver Amplifier Data Sheet Description Features Avago Technologies MGA-31589 is a 0.5 W, high Gain, ROHS compliant high performance Driver Amplifier MMIC, housed in a Halogen free standard SOT-89 plastic package. The device required 1 High linearity at low DC bias power simple matching components to achieve optimum per- formance within specific 100 to 200 MHz bandwidth. High Gain Low noise figure MGA-31589 is especially ideal for wireless infrastructure applications that operate within the 450 MHz to 1.5 GHz High OIP3 frequency range. With high IP3 and low noise figure, the Advanced enhancement mode PHEMT Technology MGA-31589 may be utilized as a driver amplifier in the Excellent uniformity in product specification transmit chain and as second or third stage LNA in the re- ceive chain. For optimum performance at higher frequen- SOT-89 standard package cy from 1.5 GHz to 3.0 GHz, MGA-31689 is recommended. Specifications MGA-31589s high gain and high linearity features are achieved through the use of Avago Technologies propri- At 0.9 GHz, Vdd = 5 V, Idd = 146 mA (typical) at 25 C etary 0.25 mm GaAs Enhancement-mode pHEMT process. OIP3 = 45.3 dBm Noise Figure = 1.9 dB Pin connections and Package Marking Gain = 20.4 dB P1dB = 27.2 dBm IRL = 14.0 dB, ORL = 11.6 dB 15X Note: 1. The MGA-31589 has a superior LFOM of 16. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias power. 3 2 1 1 2 3 RFout GND RFin RFin GND RFout VDD Top View Bottom View C Note: C Top View: Package marking provides orientation and identification 15 = Device Code X = Date Code character indentifies month of manufacturing C L Attention: Observe precautions for MGA-31589 handling electrostatic sensitive devices. C RF IN RF OUT ESD Machine Model = 150 V L ESD Human Body Model = 650 V Refer to Avago Application Note A004R: L C C C Electrostatic Discharge, Damage and Control. Figure 1. Simplified Schematic diagram 1 MGA-31589 Absolute Maximum Rating Thermal Resistance 3 Symbol Parameter Units Absolute Max. Thermal Resistance (V = 5.0 V, I = 146 mA, T = 85 C), dd dd c V Drain Voltage, RF output to ground V 5.5 dd, max = 44 C/W jc (2) P Power Dissipation mW 1050 d Notes: P CW RF Input Power dBm 17 in 1. Operation of this device in excess of any of these limits may cause permanent damage. T Junction Temperature C 150 j 2. Source lead temperature is 25 C. Derate 22.7 T Storage Temperature C -65 to 150 STG mW/ C for T >103.8 C. L 3. Thermal resistance measured using 150 C Infra-Red Microscopy Technique. 1 MGA-31589 Electrical Specification T = 25 C, Z = 50 W, V = 5 V, unless specified. C o dd Frequency Symbol Parameter and Test Condition (MHz) Units Min. Typ. Max. I Quiescent Current NA mA 115 146 175 ds NF Noise Figure 700 dB 2.35 900 1.92 2.8 Gain Gain 700 dB 20.5 900 19.3 20.4 22.0 2 OIP3 Output Third Order Intercept Point 700 dBm 45.2 2 900 40.0 45.3 P1dB Output Power at 1 dB Gain Compression 700 dBm 26.4 900 26.3 27.2 PAE Power Added Efficiency at P1dB 700 % 43.6 900 45.0 IRL Input Return Loss 700 dB 20.0 900 14.0 ORL Output Return Loss 700 dB 10.4 900 11.6 ISOL Isolation 700 dB 28.0 900 27.5 Note : 1. Measurements obtained from a test circuit described in Figure 27. 2. OIP3 test condition: F1 - F2 = 1.0 MHz, with input power of -8 dBm per tone measured at worst case side band. 2