X-On Electronics has gained recognition as a prominent supplier of MGA-53543-TR1G rf amplifier across the USA, India, Europe, Australia, and various other global locations. MGA-53543-TR1G rf amplifier are a product manufactured by Broadcom. We provide cost-effective solutions for rf amplifier, ensuring timely deliveries around the world.

MGA-53543-TR1G Broadcom

MGA-53543-TR1G electronic component of Broadcom
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See Product Specifications
Part No.MGA-53543-TR1G
Manufacturer: Broadcom
Category:RF Amplifier
Description: IC AMP RFIC 1.9GHZ SOT-343
Datasheet: MGA-53543-TR1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 3000
Multiples : 3000
3000 : USD 1.9067
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 4.5451
10 : USD 4.0558
100 : USD 3.3258
500 : USD 2.693
1000 : USD 2.2713
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1
1 : USD 2.6981
75 : USD 2.5691
375 : USD 2.4399
1500 : USD 2.3108
N/A

Obsolete
0 - WHS 4

MOQ : 3000
Multiples : 3000
3000 : USD 2.4113
6000 : USD 2.2766
12000 : USD 2.1419
N/A

Obsolete
0 - WHS 5

MOQ : 1
Multiples : 1
1 : USD 3.3533
10 : USD 2.8457
100 : USD 2.4739
250 : USD 2.3452
500 : USD 2.1092
1000 : USD 1.9943
3000 : USD 1.9943
6000 : USD 1.9595
9000 : USD 1.8436
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Maximum Operating Temperature
Pd - Power Dissipation
Operating Supply Current
Packaging
Test Frequency
Brand
Number Of Channels
Input Return Loss
Isolation Db
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Supply Voltage - Max
Supply Voltage - Min
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53x MGA-53543 50 MHz to 6 GHz High Linear Amplifi er Data Sheet Description Features Avago Technologiess MGA-53543 is a high dynamic range Lead-free Option Available low noise amplifi er MMIC housed in a 4-lead SC-70 (SOT- 1 Very high linearity at low DC bias power 343) surface mount plastic package. Low noise fi gure The combination of high linearity, low noise fi gure and high Advanced enhancement mode PHEMT technology gain makes the MGA-53543 ideal for cellular/PCS/ W-CDMA Excellent uniformity in product specifi cations base stations, Wireless LAN, WLL and other systems in the 50 MHz to 6 GHz frequency range. Low cost surface mount small plastic package SOT- 343 (4-lead SC-70) MGA-53543 is especially ideal for Cellular/PCS/ W-CDMA basestation applications. With high IP3 and low noise Tape-and-Reel packaging option available fi gure, the MGA-53543 may be utilized as a driver ampli- Specifi cations fi er in the transmit chain and as a second stage LNA in 1.9 GHz, 5V, 54 mA (typ) the receive chain. OIP3: 39 dBm Surface Mount Package Noise fi gure: 1.5 dB SOT-343 /4-lead SC70 Gain: 15.4 dB P-1dB: 18.6 dBm Applications Base station radio card High linearity LNA for base stations, WLL, WLAN, and other applications in the 50 MHz to 6 GHz range Pin Connections and Package Marking Note: INPUT 3 1. The MGA-53543 has a superior LFOM of 15 dB. Linearity Figure of 1 GND Merit (LFOM) is essentially OIP3 divided by DC bias power. There are few devices in the market that can match its combination of OUTPUT high linearity and low noise fi gure at the low DC bias power of 2 GND 4 & V d 5V/54 mA. Note: Simplifi ed Schematic Top View. Package marking provides orientation and identifi cation. 53 = Device Code x = Date code character identifi es month of manufacture. Attention: Observe precautions for handling electrostatic sensitive devices. INPUT OUTPUT, Vd ESD Machine Model (Class A) bias ESD Human Body Model (Class 1A) Refer to Avago Application Note A004R: lectrostatic Discharge Damage and Control. GND53x 1 MGA-53543 Absolute Maximum Ratings 3 Thermal Resistance Symbol Parameter Units Absolute Maximum (Vd=5.0V) jc = 130C/W V Maximum Input Voltage V 0.8 in Notes: V Supply Voltage V 5.5 d 1. Operation of this device in excess of any of 2 P Power Dissipation mW 400 these limits may cause permanent dam- d age. P CW RF Input Power dBm 13 in 2. Source lead temperature is 25C. Derate T Junction Temperature C 150 7.7mW/C for T > 98C L j 3. Thermal resistance measured using 150C T Storage Temperature C -65 to 150 STG Liquid Crystal Measurement Technique. Electrical Specifi cations T = +25C, Z = 50 , V = 5V, unless noted c o d 3 Symbol Parameter and Test Condition Frequency Units Min. Typ. Max. I Current Drawn N/A mA 40 54 70 2.7 d 1 NF Noise Figure 2.4 GHz 1.9 1.9 GHz dB 1.5 1.9 0.06 0.9 GHz 1.3 1 Gain Gain 2.4 GHz 15.1 1.9 GHz dB 14 15.4 17.0 0.25 0.9 GHz 17.4 1,2 OIP3 Output Third Order Intercept Point 2.4 GHz 38.7 1.9 GHz dBm 36 39.1 1.89 0.9 GHz 39.7 1 P1dB Output Power at 1 dB Gain Compression 2.4 GHz 18.3 1.9 GHz dBm 18.6 0.9 GHz 19.3 1 PAE Power Added Eff ciency at P1dB 1.9 GHz % 29.7 0.9 GHz % 28.3 1 RL Input Return Loss 2.4 GHz -12.7 in 1.9 GHz dB -13.2 0.9 GHz -11.1 1 RL Output Return Loss 2.4 GHz -25.1 out 1.9 GHz dB -14.3 0.9 GHz -14.4 1 2 ISOL Isolation s 1.9 GHz dB -23.4 12 0.9 GHz -22.3 Notes: 1. Measurements obtained from a test circuit described in Figure 1. Input and output tuners tuned for maximum OIP3 while keeping VSWR bet- ter than 2:1. Data corrected for board losses. 2. I) Output power level and frequency of two fundamental tones at 1.9 GHz: F1 = 5.49 dBm, F2 = 5.49 dBm, F1 = 1.905 GHz, and F2 = 1.915 GHz. II) Output power level and frequency of two fundamental tones at 900 MHz: F1 = -0.38 dBm, F2 = -0.38 dBm, F1 = 905 MHz, and F2 = 915 MHz. 3. Standard deviation data are based on at least 500 pieces sample size taken from 8 wafer lots. Future wafers allocated to this product may have nominal values anywhere between the upper and lower spec limits. Input Gamma & V d Transmission Line RF Output Gamma & = 0.38 156 Source Input Transmission Line with (0.7 dBm Loss) Bias Tee = 0.05 45 RF Load (0.85 dBm Loss) Output Figure 1. Block Diagram of 1.9 GHz Test Fixture. 2

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
AV4
AV9
Avago
Avago Technologies US Inc.
AVAGO(Broadcom)
Broadcom Avago
BROADCOM (AVAGO)
Broadcom / Avago
BROADCOM CORPORATION
Broadcom Limited
PLX Technology Avago
PLX Technology / Avago

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