MGA-545P8 50 MHz to 7 GHz Medium Power Amplifi er Data Sheet Description Specifi cations 3.3 V, 92 mA, 5.825 GHz at saturation mode Avagos MGA-545P8 is an economical, low current, medium power, easy-to-use GaAs MMIC amplifi er that off ers 22 dBm saturated power across1-7 GHz excellent power output at 5.8 GHz. Although optimized for 9.5 dB gain 5.8 GHz applications, the MGA-545P8 is suitable for other 46% PAE applications in the 50 MHz to 7 GHz frequency range. 3.3 V, 135 mA, 5.825 GHz at linear mode With the addition of a simple input match, the MGA-545P8 11.5 dB small signal gain off ers a small signal gain of 11.5 dB, a saturated power Pout = 16 dBm at 5.6% EVM output of 22 dBm and a saturated gain of 9.5 dB at 5.8 GHz. The MGA-545P8 has a nominal current consumption 34 dBm OIP3 at 2.7 V of 92 mA in saturated mode and 135 mA in linear mode at Features a device voltage of 3.3 V with power added effi ciency of 46% in saturated mode. Unconditionally stable The MGA-545P8 is housed in the 2X2 mm-8L LPCC Single +3.3 V operation package. This package off ers good thermal dissipation 3 Small package size: 2.0 x 2.0 x 0.75 mm and very good high frequency characteristics making 2 Point MTTF > 300 years it appropriate for medium power applications through MSL-1 and Pb-free and Halogen-free 7 GHz. Tape-and-reel packaging option available Pin Connections and Package Marking Applications PIN 8 PIN 1 The MGA-545P8 is ideal for use as IF Amplifi er, driver PIN 7 (OUT) PIN 2 (IN) amplifi er and power amplifi er in: PIN 6 PIN 3 3-4 GHz fi xed wireless access (WLL) PIN 5 PIN 4 5-6 GHz fi xed wireless access (HiperLAN/UNII) 5-6 GHz WLAN 802.11a NIC and AP BOTTOM VIEW Other applications in the 50 MHz to 7 GHz frequency range PIN 1 PIN 8 IN OUT Simplifi ed Schematic 4Tx PIN 3 PIN 6 PIN 4 PIN 5 BIAS TOP VIEW OUTPUT FET INPUT & V Note: Package marking provides orientation and identifi cation. d 4T = Device Code x = Date code indicates the month of manufacture. RF GND Attention: Observe precautions for handling electrostatic sensitive devices. Notes: ESD Machine Model = 40 V 1. Enhancement mode technology employs a single positive V , gs eliminating the need of negative gate voltage associated with ESD Human Body Model = 200 V conventional depletion mode devices. Refer to Avago Application Note A004R: 2. Refer to reliability datasheet for detailed MTTF data. Electrostatic Discharge, Damage and Control. 3. Conform to JEDEC reference outline MO229 for DRP-N. SOURCE (THERMAL/RF GND) 1 MGA-545P8 Absolute Maximum Ratings Parameter Units Absolute Maximum V Device Voltage, RF output to ground V 5.0 d P CW RF Input Power dBm 20 in 2 Thermal Resistance C/W 124 jc 3 Pdiss Total Power Dissipation W 0.8 Tj Junction Temperature C 150 T Storage Temperature C 65 to 150 STG Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. Thermal resistance measured using 150C Liquid Crystal Measurement Technique. 3. Board (package belly) temperature T is 25C. Derate 8 mW/C for T > 51C. b b 0.01 F 1000 pF V DD 10 pF 4.7 nH 1 8 12 pF 50 50 2 7 RF INPUT RF OUTPUT 4Tx 10 pF 3 6 OPEN-CIRCUITED STUB 4 5 (34 mil x 72 mil) Figure 1. Production test circuit. This circuit represents a match for maximum gain and saturated power. 0.01 F 12 pF 1000 pF 10 pF 4.7 nH CONTACTOR 10 pF Figure 2. Close-up of production test board. Rogers 4350 Er = 3.48 0.05, thickness = 10 mils. 2