MGA-635P8 Ultra Low Noise, High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies MGA-635P8 is an economical, easy- Ultra Low noise Figure to-use GaAs MMIC Low Noise Amplifier (LNA). The LNA has High linearity performance low noise and high linearity achieved through the use of 1 GaAs E-pHEMT Technology Avago Technologies proprietary 0.25mm GaAs Enhance- 3 Low cost small package size: 2.0 x 2.0 x 0.75 mm ment-mode pHEMT process. It is housed in a miniature 2.0 Excellent uniformity in product specifications 3 x 2.0 x 0.75mm 8-pin Quad-Flat-Non-Lead (QFN) package. Tape-and-Reel packaging option available It is designed for optimum use from 2.3GHz up to 4GHz. The compact footprint and low profile coupled with low Specifications noise, high gain and high linearity make the MGA-635P8 an ideal choice as a low noise amplifier for cellular infra - 2.5GHz 5V, 56mA structure for LTE, GSM and CDMA. For optimum perfor- 18 dB Gain mance at lower frequency from 450MHz up to 1.5GHz, 0.56 dB Noise Figure MGA-633P8 is recommended. For optimum performance 12.5 dB Input Return Loss at frequency from 1.5GHz up to 2.3GHz, MGA-634P8 is recommended. All these 3 products, MGA-633P8, 35.9 dBm Output IP3 MGA-634P8 and MGA-635P8 share the same package and 22 dBm Output Power at 1dB gain compression pinout configuration. Applications Pin Configuration and Package Marking Low noise amplifier for cellular infrastructure for LTE, 3 2.0 x 2.0 x 0.75 mm 8-lead QFN GSM and CDMA. Other ultra low noise application. 1 8 8 1 7 7 2 Simplified Schematic 2 35X 6 3 6 3 Vdd 5 4 5 4 Rbias Top View Bottom View C6 R1 C5 R2 Pin 1 Vbias Pin 5 Not Used Pin 2 RFinput Pin 6 Not Used C4 C3 Pin 3 Not Used Pin 7 RFoutput/Vdd L1 L2 Pin 4 Not Used Pin 8 Not Used Centre tab - Ground 1 8 bias RFin C1 C2 RFout Note: 2 7 Package marking provides orientation and identification 3 6 35 = Device Code, where X is the month code. 4 5 Attention: Observe precautions for Notes: handling electrostatic sensitive devices. The schematic is shown with the assumption that similar PCB is used ESD Machine Model = 50 V (Class A) for all MGA-633P8, MGA-634P8 and MGA-635P8. Detail of the components needed for this product is shown in Table 1. ESD Human Body Model = 500 V (Class 1B) Enhancement mode technology employs positive gate voltage, Refer to Avago Application Note A004R: thereby eliminating the need of negative gate voltage associated Electrostatic Discharge, Damage and Control. with conventional depletion mode devices. Good RF practice requires all unused pins to be earthed. 1 Absolute Maximum Rating T =25C Thermal Resistance A 3 Symbol Parameter Units Absolute Maximum Thermal Resistance (V = 5.0V, I = 50mA) dd dd Device Voltage, V 5.5 V dd = 75C/W jc RF output to ground Notes: V Gate Voltage V 0.7 bias 1. Operation of this device in excess of any of these limits may cause permanent damage. P CW RF Input Power dBm +20 in,max 2. Power dissipation with device turned on. (V = 5.0V, I = 50 mA) dd d Board temperature T is 25C. Derate at B 2 13mW/C for T >112C. P Total Power Dissipation W 0.5 B diss 3. Thermal resistance measured using Infra-Red T Junction Temperature C 150 j Measurement Technique T Storage Temperature C -65 to 150 stg 1 , 4 Electrical Specifications RF performance at T = 25C, V = 5V, R = 3.6 kOhm, 2.5 GHz, measured on demo board in Figure 1 with component A dd bias listed in Table 1 for 2.5 GHz matching. Symbol Parameter and Test Condition Units Min. Typ. Max. I Drain Current mA 46 56 71 dd Gain Gain dB 16.5 18 19.5 2 OIP3 Output Third Order Intercept Point dBm 32.5 35.9 3 NF Noise Figure dB 0.56 0.78 OP1dB Output Power at 1dB Gain Compression dBm 22 IRL Input Return Loss, 50 source dB 12.5 ORL dB 12 Output Return Loss, 50 load REV ISOL Reverse Isolation dB 35 Notes: 1. Measurements at 2.5 GHz obtained using demo board described in Figure 1. 2. OIP3 test condition: F = 2.5 GHz, F = 2.501 GHz with input power of -10dBm per tone. RF1 RF2 3. For NF data, board losses of the input have not been de-embedded. 4. Use proper bias, heatsink and derating to ensure maximum device temperature is not exceeded. See absolute maximum ratings and application note for more details. 2