85x MGA-85563 3-volt, Low Noise Amplifier for 0.8 6 GHz Applications Data Sheet Description Features Lead-free Option Available Avagos MGA-85563 is an easy-to-use GaAs RFIC amplifier that offers low noise figure and high gain from 0.8 to 1.6 dB minimum Noise Figure at 1.9 GHz 6 GHz. Packaged in an ultra-miniature SOT-363 package, Adjustable IP3 from +12 dBm to +17 dBm via it requires half the board space of a SOT-143 package. External Resistor The MGA-85563 features a minimum noise figure of 18 dB Gain at 1.9 GHz 1.6 dB and associated gain of 18 dB at 1.9 GHz. The Single 3V Supply output is matched internally to 50, and the input is par- Unconditionally Stable tially matched, requiring only a single external inductor for optimal performance. The supply current can be ad- justed using an external resistor, varying IP3 from +12 Applications dBm to +17 dBm. Amplifier for Cellular, PCS, and Wireless LAN The circuit uses state-of-the-art PHEMT technology with Applications proven reliability. On-chip bias circuitry allows opera- tion from a single +3V supply, while resistive feedback ensures stability (K > 1) over frequency and temperature. Equivalent Circuit (Simplified) Surface Mount Package SOT-363 (SC-70) 6 RF OUTPUT and V d 3 4 BIAS RF R bias NPUT Pin Connections and Package Marking 1, 2, 5 BIAS GROUND OUTPUT GND16 and V d GND25 GND Attention: Observe precautions for handling electrostatic sensitive devices. INPUT R 34 bias ESD Human Body Model (Class 0) Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control. Note: Package marking provides orientation and identification x is date code.MGA-85563 Absolute Maximum Ratings 2 Thermal Resistance : Absolute 1 = 155C/W Symbol Parameter Units Maximum ch to c V , max Maximum Device Voltage V 5.5 d Notes: 1. Operation of this device above any one P CW RF Input Power dBm +13 in of these limits may cause permanent damage. T Channel Temperature C 150 ch 2. T = 25C (T is defined to be the C C T Storage Temperature C -65 to 150 STG temperature at the package pins where contact is made to the circuit board). Electrical Specifications, T = 25C, Z = 50 , V = 3 V, and using default of no external resistor at the R pin C O d bias 3 Symbol Parameters and Test Conditions Units Min. Typ. Max. Std. Dev. 1 G Gain in Test Circuit f = 2.0 GHz dB 16 19 1.0 test 1 NF Noise Figure in Test Circuit f = 2.0 GHz dB 1.85 2.3 0.1 test NF Minimum Noise Figure f = 0.9 GHz dB 1.6 MIN (measured with G presented to the f = 1.5 GHz 1.6 opt input and 50 presented to the output) f = 2.0 GHz 1.6 0.1 f = 2.4 GHz 1.6 f = 4.0 GHz 1.6 f = 5.0 GHz 1.6 f = 6.0 GHz 1.6 G Associated Gain at NF f = 0.9 GHz dB 17.0 A MIN (measured with G presented to the f = 1.5 GHz 17.5 opt input and 50 presented to the output) f = 2.0 GHz 18.0 1.0 f = 2.4 GHz 18.5 f = 4.0 GHz 17.5 f = 5.0 GHz 16.0 f = 6.0 GHz 14.5 IP Third Order Intercept Point f = 0.9 GHz dBm 13 3 (measured with 50 presented f = 1.5 GHz 13 to the input and output) f = 2.0 GHz 11.5 1.2 f = 2.4 GHz 11.5 f = 4.0 GHz 13 f = 5.0 GHz 12.5 f = 6.0 GHz 12 P Output Power at 1 dB Gain Compression f = 0.9 GHz dBm 0.8 1 dB (measured with 50 presented f = 1.5 GHz 0.9 to the input and output) f = 2.0 GHz 0.9 1.1 f = 2.4 GHz 1.0 f = 4.0 GHz 1.4 f = 5.0 GHz 1.3 f = 6.0 GHz 1.2 2 VSWR Input VSWR 2.5:1 in 2