DATA SHEET: CA3509M4 L TO S BAND LOW NOISE AMPLIFIER IC Features Description Low noise figure and high associated gain Low Noise and High Gain On chip Bias supply circuit NF=0.4dB Typ., Ga=17.0dB Typ. On chip ESD protection diode Vdd=3.0V, Idd=15mA, f=1.575GHz Applications Low Noise Amplifier IC for Global Navigation Satellite Systems (GNSS) like GPS, GLONASS, Beidou and Galileo Low Noise Amplifier IC for Satellite Radio (SDARS, DMB, etc.) Antenna Low Noise Amplifier for Microwave Communication Package Flat-lead 4-pin thin-type super minimold package PIN Configuration PIN No. PIN Name 1 Source 2 OUT C0U 3 Source 4 IN Ordering Information Part Number Order Number Package Marking Supplying Form CA3509M4 CA3509M4-C2B Flat-lead 4-pin C0U Embossed 8 mm wide thin-type super Pin 1 (Source), Pin 2 (OUT) minimold package Face the perforation side of the Tape Qty 5Kpcs/reel CDS-0043-07 Page 1 of 6 Oct 2019 DATA SHEET: CA3509M4 L TO S BAND LOW NOISE AMPLIFIER IC Absolute Maximum Ratings Parameter Symbol Rating Unit Supply Voltage Vdd 4.0 V RF Input Power PRFin +13 dBm Operating Ambient Temperature T -45~+85 A Storage Temperature Tstg -55~+150 Recommended Operating Range (TA=+25, unless otherwise specified) Parameter Symbol MIN. TYP. MAX. Unit Supply Voltage Vdd 2.7 3.0 3.3 V Electrical Characteristics: (TA=+25, unless otherwise specified) *With Matching Circuit Parameter Symbol Condition MIN. TYP. MAX. Unit Supply Current Idd Vdd=3.0V 11.4 15.0 20.6 mA Power Gain Gain 15.5 17.0 - dB Vdd=3.0V, Idd=15mA, f=1.575GHz Noise Figure NF - 0.40 0.65 dB Input 3rd Order Vdd=3.0V, Id=15mA, IIP3 - +4.5 - dBm Intercept Point f=1.575GHz Vdd=3.0V, Idd=15mA Output Power at 1dB P (Non-RF) - 12.0 - dBm O(1dB) Compression Point f=1.575GHz CDS-0043-07 Page 2 of 6