BIPOLAR ANALOG INTEGRATED CIRCUIT UPC2762TB 3 V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER INSERTION POWER GAIN vs. FEATURES FREQUENCY AND TEMPERATURE HIGH P1dB: 7 dBm TYP at 1.9 GHz LOW VOLTAGE: 3.0 V TYP, 2.7 V MIN WIDE BANDWIDTH: 2.9 GHz at -3 dB TA = +85C SUPER SMALL PACKAGE: SOT-363 package TAPE AND REEL PACKAGING OPTION AVAILABLE TA = +25C DESCRIPTION TA = -40C The UPC2762TB is a Silicon Monolithic integrated circuit which is manufactured using the NESAT III process. The NESAT III process produces transistors with fT approaching VCC = 3.0 V 20 GHz. The UPC2762TB is pin compatible and has compa- 0.1 0.3 1.0 3.0 rable performance to the larger UPC2762T, so it is suitable for use as a replacement to help reduce system size. The IC is Frequency, f (MHz) housed in a 6 pin super minimold or SOT-363 package. Operating on a 3 volt supply, this IC is ideally suited for hand- held, portable designs. Stringent quality assurance and test procedures ensure the highest reliability and performance. ELECTRICAL CHARACTERISTICS (TA = 25C, ZL = ZS = 50, VCC = 3.0 V) PART NUMBER UPC2762TB PACKAGE OUTLINE S06 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICC Circuit Current (no signal) mA 27 35 GS Small Signal Gain, f = 900 MHz dB 11 13 16 f = 1900 MHz dB 11.5 15.5 17.5 fU Upper Limit Operating Frequency (The gain at fu is 3 dB down from the gain at 0.1 GHz) GHz 2.7 2.9 P1dB Output Power at 1 dB Compression Point, f = 900 MHz dBm +5.5 +8 f = 1900 MHz dBm +4.5 +7 PSAT Saturated Output Power, f = 900 MHz dBm 9 f = 1900 MHz dBm 8.5 NF Noise Figure, f = 900 MHz dB 6.5 8.0 f = 1900 MHz dB 7 9.0 RLIN Input Return Loss, f = 900 MHz dB 6 9 f = 1900 MHz dB 5.5 8.5 RLOUT Output Return Loss, f = 900 MHz dB 8 11 f = 1900 MHz dB 9 12 ISOL Isolation, f = 900 MHz dB 22 27 f = 1900 MHz dB 20 25 OIP3 SSB Output Third Order Intercept Point f = 900, 902 MHz dBm +12 POUT = +4 dBm f = 1900, 1902 MHz dBm +9 PADJ Adjacent Channel Power, f = 50 KHz dBc -64 1 f = 900 MHz, /4 QPSK wave , f = 100 KHz dBc -64 PO = +4 dBm Note: 1. /4 QPSK modulated wave input, data rate 42 kbps. PHASE-OUT Insertion Power Gain, GP (dB)UPC2762TB 1 ABSOLUTE MAXIMUM RATINGS (TA = 25C) RECOMMENDED OPERATING CONDITIONS SYMBOLS PARAMETERS UNITS MIN TYP MAX SYMBOLS PARAMETERS UNITS RATINGS VCC Supply Voltage V 2.7 3 3.3 VCC Supply Voltage V 3.6 TOP Operating Temperature C -40 25 85 ICC Total Supply Current mA 70 PIN Input Power dBm +10 TEST CIRCUIT 2 PT Total Power Dissipation mW 270 TOP Operating Temperature C -40 to +85 VCC TSTG Storage Temperature C -55 to +150 Notes: 1000 pF 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB (TA = 85C). L = 300 nH 6 50 50 4 1 OUT IN 1000 pF 1000 pF 2, 3, 5 TYPICAL PERFORMANCE CURVES (TA = 25C) CIRCUIT CURRENT vs. CIRCUIT CURRENT vs. SUPPLY VOLTAGE OPERATING TEMPERATURE 50 50 No signal VCC = 3.0 V 40 40 30 30 20 20 10 10 0 0 -60 -40 -20 0 20 40 60 80 100 0 1 23 4 Supply Voltage, VCC (V) Operating Temperature, TOP (C) NOISE FIGURE AND INPUT AND OUTPUT INSERTION POWER GAIN vs. RETURN LOSS vs. FREQUENCY AND VOLTAGE FREQUENCY 20 0 VCC = 3.0V 18 RLin VCC = 3.3 V 16 VCC = 3.0 V -10 VCC = 2.7 V 14 GS RLout 12 -20 10 10 VCC = 3.3 V 8 8 NF -30 6 6 VCC = 3.0 V VCC = 2.7 V 4 4 2 -40 2 0.1 0.3 1.0 3.0 0.1 0.3 1.0 3.0 Frequency, f (GHz) Frequency, f (GHz) PHASE-OUT Gain, GS (dB) Circuit Current, ICC (mA) Noise Figure, NF (dB) Return Loss (dB) Circuit Current, ICC (mA)