2N6050 2N6051 2N6052 PNP 2N6057 2N6058 2N6059 NPN www.centralsemi.com COMPLEMENTARY SILICON DESCRIPTION: DARLINGTON POWER The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 TRANSISTORS series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications. MARKING: FULL PART NUMBER TO-3 CASE 2N6050 2N6051 2N6052 MAXIMUM RATINGS: (T =25C) SYMBOL 2N6057 2N6058 2N6059 UNITS C Collector-Base Voltage V 60 80 100 V CBO Collector-Emitter Voltage V 60 80 100 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 12 A C Peak Collector Current I 20 A CM Continuous Base Current I 0.2 A B Power Dissipation P 150 W D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 1.17 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN MAX UNITS I V =Rated V , V=1.5V 0.5 mA CEV CE CEO EB I V =Rated V , V =1.5V, T=150C 5.0 mA CEV CE CEO EB C I V =Rated V 1.0 mA CEO CE CEO I V=5.0V 2.0 mA EBO EB BV I =100mA, (2N6050, 2N6057) 60 V CEO C BV I =100mA, (2N6051, 2N6058) 80 V CEO C BV I =100mA, (2N6052, 2N6059) 100 V CEO C V I =6.0A, I=24mA 2.0 V CE(SAT) C B V I =12A, I=120mA 3.0 V CE(SAT) C B V I =12A, I=120mA 4.0 V BE(SAT) C B V V =3.0V, I=6.0A 2.8 V BE(ON) CE C h V =3.0V, I=6.0A 750 18K FE CE C h V =3.0V, I=12A 100 FE CE C h V =3.0V, I =5.0A, f=1.0kHz 300 fe CE C f V =3.0V, I =5.0A, f=1.0MHz 4.0 MHz T CE C C V =10V, I =0, f=100kHz (PNP types) 500 pF ob CB E C V =10V, I =0, f=100kHz (NPN types) 300 pF ob CB E R1 (18-September 2012)2N6050 2N6051 2N6052 PNP 2N6057 2N6058 2N6059 NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS TO-3 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter Case) Collector MARKING: FULL PART NUMBER R1 (18-September 2012) www.centralsemi.com