Product Information

2N6547

2N6547 electronic component of Central Semiconductor

Datasheet
Bipolar Transistors - BJT NPN 850Vcev 450Vcex 400Vceo 175W Trans

Manufacturer: Central Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

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2N6547
Central Semiconductor

1 : USD 4.3095
10 : USD 4.1163
25 : USD 3.8629
100 : USD 3.2834
250 : USD 3.0661
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

2N6547
Central Semiconductor

1 : USD 15.5505
10 : USD 13.9823
20 : USD 13.5457
100 : USD 11.6535
500 : USD 10.6406
1000 : USD 10.0469
2500 : USD 9.6976
N/A

Obsolete
     
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Product Category
RoHS - XON
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Cnhts
Hts Code
Mxhts
Product Type
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2N6546 2N6547 www.centralsemi.com NPN SILICON DESCRIPTION: POWER TRANSISTOR The CENTRAL SEMICONDUCTOR 2N6546, 2N6547 types are NPN Silicon Power Transistors designed for high voltage, high current, applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) C SYMBOL 2N6546 2N6547 UNITS Collector-Emitter Voltage V 650 850 V CEV Collector-Emitter Voltage V 350 450 V CEX Collector-Emitter Voltage V 300 400 V CEO Emitter-Base Voltage V 9.0 V EBO Continuous Collector Current I 15 A C Peak Collector Current I 30 A CM Continuous Emitter Current I 25 A E Peak Emitter Current I 50 A EM Continuous Base Current I 10 A B Peak Base Current I 20 A BM Power Dissipation P 175 W D Power Dissipation, T=100C P 100 W C D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 1.0 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C 2N6546 2N6547 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V =Rated V , V=1.5V - 1.0 - 1.0 mA CEV CE CEV BE I V =Rated V , V =1.5V, T=100C - 4.0 - 4.0 mA CEV CE CEV BE C I V =Rated V , R =50, T=100C - 5.0 - 5.0 mA CER CE CEV BE C I V=9.0V - 1.0 - 1.0 mA EBO EB BV V =Rated V , I =8.0A, T=100C 350 - 450 - V CEX CL CEX C C BV V =Rated V -100V, I =15A, T=100C 200 - 300 - V CEX CL CEO C C BV I=100mA 300 - 400 - V CEO C V I =10A, I=2.0A - 1.5 - 1.5 V CE(SAT) C B V I =10A, I =2.0A, T=100C - 2.5 - 2.5 V CE(SAT) C B C V I =15A, I=3.0A - 5.0 - 5.0 V CE(SAT) C B V I =10A, I=2.0A - 1.6 - 1.6 V BE(SAT) C B V I =10A, I =2.0A, T=100C - 1.6 - 1.6 V BE(SAT) C B C h V =2.0V, I=5.0A 12 60 12 60 FE CE C h V =2.0V, I=10A 6.0 30 6.0 30 FE CE C R2 (12-December 2011)2N6546 2N6547 NPN SILICON POWER TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN TYP MAX UNITS f V =10V, I =500mA, f=1.0MHz 6.0 28 MHz t CE C C V =10V, I =0, f=1.0MHz 125 500 pF ob CB E I V =100V, t=1.0s 0.2 A s/b CE Resistive Load t 0.05 s d V =250V, I =10A, CC C t 1.0 s r I =I =2.0A, t =100s, B1 B2 p t 4.0 s s Duty Cycle2.0% t 0.7 s f Inductive Load (Clamped) t 5.0 s V =Rated V , I =10A, s CL CEX C t 1.5 s I =2.0A, V =5.0V, T =100C f B1 BE C t V =Rated V , I =10A, 2.0 s s CL CEX C t I =2.0A, V =5.0V, T =25C 0.9 s f B1 BE C TO-3 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter Case) Collector MARKING: FULL PART NUMBER R2 (12-December 2011) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Central
Central Semi
CENTRAL SEMICONDUCTOR
Central Semiconductor Corp
Central Semiconductor Corp.

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