SMD Switching Diode CDSZC01100-HF IO = 100 mA VR = 80 Volts RoHS Device Halogen Free 0201/DFN0603 Features - High Speed. 0.015(0.37) 0.011(0.27) - Designed for mounting on ultra small surface. - Extremely thin/leadless package. 0.026(0.67) 0.022(0.57) - High mounting capability, strong surge withstand, high reliability. - Low capacitance. 0.013(0.340) 0.011(0.275) Mechanical data 0.002(0.06) - Case: 0201/DFN0603 package, REF. molded plastic. 0.017(0.435) 0.002(0.04) 0.014(0.365) REF. - Terminals: Gold plated, solderable per MIL-STD-750, method 2026. 0.011(0.275) - Polarity: Color band denotes cathode end. 0.008(0.205) - Mounting position: Any - Weight: 0.0004 grams(approx.). 0.007(0.175) 0.007(0.175) 0.004(0.105) 0.004(0.105) Circuit diagram Dimensions in inches and (millimeter) Maximum Rating (at TA=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Repetitive peak reverse voltage VRRM 100 V Reverse voltage VR 80 V Repetitive peak forward current IFM 300 mA Average forward current IO 100 mA Non-repetitive peak forward surge current Tp=1.0us IFSM 2 A Power dissipation PD 200 mW Operating temperature range TJ -40 +150 C Storage temperature range TSTG -55 +150 C Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-G0034 Page 1 Comchip Technology CO., LTD.SMD Switching Diode Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit IF = 1mA 0.61 V Forward voltage IF = 10mA VF 0.75 V IF = 100mA 0.93 1.2 V A VR = 30V 0.3 Reverse current IR A VR =80V 0.5 Capacitance between terminals f = 1MHZ, and 0 VDC reverse voltage pF CT 0.35 3 IF = IR=10mA, RL = 100 ohms Reverse recovery time TRR 4 nS Irr = 1mA RATING AND TYPICAL CHARACTERISTIC CURVES (CDSZC01100-HF) Fig.1 - Forward Characteristics Fig.2 - Reverse Characteristics 100 100 TA=150C 10 TA=150C TA=125C TA=125C 10.0 TA=100C 1.00 TA=75C TA=100C TA=75C TA=50 C 0.10 TA=25C TA=25C 1.00 0.01 0.001 0.10 0 20 40 60 80 0 0.2 0.4 0.6 0.8 1.0 Reverse Voltage, VR (V) Forward Voltage, VF (V) Fig.3 - Capacitance Between Fig.4 - Power Derating Curve Terminals Characteristics 0.80 f = 1 MHz Ta = 25C 0.70 200 0.60 0.50 150 0.40 100 0.30 0.20 50 0.10 0 0 0 10 20 30 40 0 25 50 75 100 125 150 Reverse Voltage, VR (V) Ambient Temperature, (C) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-G0034 Page 2 Comchip Technology CO., LTD. Capacitance Between Terminals, CT (PF) Forward Current, IF (mA ) Power Dissipation, (mW) Reverse Current, IR ( A)