SMD Fast Recovery Rectifiers CFRM104-HF Thru. CFRM107-HF Voltage: 400 to 1000 Volts Current: 1.0 A RoHS Device Mini SMA Halogen Free 0.154(3.9) 0.138(3.5) 0.012(0.3) Typ. Features -Batch process design,excellent power dissipation offers better reverse leakage current and thermal resistance. 0.075(1.9) 0.059(1.5) -Low Profile surface mounted application in order to optimize board space. -Tiny plastic SMD package. -High current capability. -Fast switching for high efficiency. 0.067(1.7) -High surge current capability. 0.051(1.3) -Glass passivated chip junction. 0.028(0.7) Typ. 0.028(0.7) Typ. Mechanical data -Case: Molded plastic, SOD-123/Mini SMA. Dimensions in inches and (millimeter) -Terminals: Solder plated, solderable per MIL-STD- 750, method 2026. Circuit diagram -Polarity: Indicated by cathode band. -Weight: 0.018 grams approx. Maximum Ratings (at TA=25Cunless otherwise noted) CFRM CFRM CFRM Parameter Symbol Unit 104-HF 105-HF 107-HF Repetitive peak reverse voltage VRRM 400 600 1000 V RMS voltage VRMS 280 420 700 V Continuous reverse voltage VR 400 600 1000 V Maximum Forward rectified current IO 1.0 A VF 1.3 V Maximum forward voltage IF= 1.0A Maximum Forward surge current 8.3ms single half sine-wave superimposed IFSM 30 A on rated load (JEDEC method) VR=VRRM TA= 25 C 5.0 Maximum A IR Reverse current VR=VRRM TA=125 C 100 nS Maximum Reverse recovery time (note 1) 150 250 500 trr Typical Thermal resistance 35 C/W RJC (Junction to case ) Typical Diode junction capacitance 15 pF CJ f=1MHz and applied 4V DC reverse voltage Operating junction temperature TJ -55 to +150 C Storage temperature range TSTG -65 to +175 C Note 1. Reverse recovery time test condition , IF=0.5A, IR=1.0A,IRR=0.25A Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-JF001 Page 1 Comchip Technology CO., LTD.SMD Fast Recovery Rectifiers Rating and Characteristic Curves (CFRM104-HF Thru. CFRM107-HF) Fig.1 Typical forward characteristics Fig.2- Typical forward current derating curve 100 1.2 1.0 10 0.8 1 0.6 0.4 0.1 Single phase, half wave, 60Hz, resistive O 0.2 TJ=25 C or inductive load Pulse width=300s 1% duty cycle 0.01 0 0 20 40 60 80 100 120 140 160 180 200 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Forward Voltage, (V) Ambient temperature, ( C) Fig.3- Test Circuit Diagram and Reverse Recovery Time Characteristics trr 50W 10W +0.5A NONINDUCTIVE NONINDUCTIVE 0 (+) ( ) D.U.T. 25Vdc PULSE -0.25A (approx.) GENERATOR (NOTE 2) ( ) (+) 1W OSCILLISCOPE NON- (NOTE 1) INDUCTIVE -1.0A NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 1cm SET TIME BASE FOR 2. Rise Time= 10ns max., Source Impedance= 50 ohms. 50 / 10ns / cm Fig.4- Maximum Non-repetitive forward Fig.5- Typical junction capacitance surge current 50 35 O TJ=25 C 8.3ms single half sine wave, JEDEC method 30 40 25 30 20 15 20 10 10 5 0 0 1 10 100 0.01 0.1 1 10 100 Number of cycles at 60Hz Reverse voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-JF001 Page 2 Comchip Technology CO., LTD. Peak forward surge current, (A) Instantaneous forward current, (A) , Averaged forward current (A) Junction capacitance, (pF)