TV02W101-G Comchip

TV02W101-G electronic component of Comchip
TV02W101-G Comchip
TV02W101-G ESD Protection Diodes / TVS Diodes
TV02W101-G  Circuit Protection
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of TV02W101-G ESD Protection Diodes / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. TV02W101-G ESD Protection Diodes / TVS Diodes are a product manufactured by Comchip. We provide cost-effective solutions for ESD Protection Diodes / TVS Diodes, ensuring timely deliveries around the world.

Part No.TV02W101-G
Manufacturer:Comchip
Category:ESD Protection Diodes / TVS Diodes
Description:ESD Suppressors / TVS Diodes 200W, VRWM=100V
Datasheet:TV02W101-G Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
1: USD 0.4108 ea
Line Total: USD 0.41 
Availability : 4132
  
Ship by Tue. 23 Jun to Thu. 25 Jun
QtyUnit Price
1$ 0.4108
10$ 0.3255
100$ 0.1991
500$ 0.1513
1000$ 0.1166
3000$ 0.1051
6000$ 0.0993
9000$ 0.0912
  

Availability4132
Ship by Tue. 23 Jun to Thu. 25 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.4108
10$ 0.3255
100$ 0.1991
500$ 0.1513
1000$ 0.1166
3000$ 0.1051
6000$ 0.0993
9000$ 0.0912

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Vf - Forward Voltage
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TV02W101-G from our ESD Protection Diodes / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TV02W101-G and other electronic components in the ESD Protection Diodes / TVS Diodes category and beyond.

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SMD Transient Voltage Suppressor TV02W5V0-G Thru. TV02W191-G Working Peak Reverse Voltage:5.0-190 Volts Peak Pulse Power:200 Watts RoHS Device Features - Glass passivated chip. SOD-123 - Low leakage current. - 200W peak pulse power capility with a 10/1000us 0.114 (2.90) waveform,repetitive rate (duty cycle):0.01%. 0.102 (2.60) - Uni and bidirectional unit. 0.047 (1.20) 0.075 (1.90) 0.028 (0.70) 0.063 (1.60) - Excellent clamping capability. 0.153 (3.90) - Very fast response time. 0.138 (3.50) Mechanical data - Case: Molded plastic. 0.010 (0.25) - Epoxy: UL 94V-0 rate flame retardant. 0.051 (1.30) 0.002 (0.05) 0.037 (0.95) - Lead: Solderable per MIL-STD-750, method 2026. 0.033 (0.85) 0.014 (0.35) - Polarity: Color band denotes cathode end except bipolar. - Mounting position: Any. Dimensions in inches and (millimeter) - Weight: 0.016 grams(approx.). Circuit Diagram Bi-directional Uni-directional Maximum Rating and Electrical Characteristics Ratings at 25C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbol Parameter Value Unit Peak power dissipation at 10/1000s waveform (Note 1) PPP 200 W Peak power dissipation at 8/20s waveform (Note 1) PPP 1000 W Peak pulse current with a 10/1000s waveform (Note 1) IPP See next table A Power dissipation on infinite heatsink at TL = 75C PD 0.4 W Peak forward surge current, 8.3ms single half sone-wave IFSM 20 A undirestional only (Note 2) Max.instantaneous forward voltage at 25A for VF 3.5 V undirestional only Operating junction and storage temperature range TJ,TSTG -55 to +150 C Notes: 1. Non-repetitive current pulse, per Fig.3 and derated above TA=25C per Fig.1 2. Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum. Company reserves the right to improve product design , functions and reliability without notice. REV:E QW-BTV15 Page 1 Comchip Technology CO., LTD.SMD Transient Voltage Suppressor Rating and Characteristic Curves (TV02W5V0-G Thru. TV02W191-G) Fig. 1 - Pulse Derating Curve Fig.2 - Steady State Power Derating Curve 150 0.6 125 0.5 100 0.4 75 0.3 50 0.2 25 0.1 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 175 200 Lead Temperature, (C) Ambient Temperature, (C) Fig. 3 - Pulse Waveform Fig. 4 - Peak Pulse Power Rating Curve 10 TJ=25C Tr=10s Pulse Width(td) is defined as the point where the peak Peak Value(IPP) current decays 50% of IPPM 100 Half Value=IPP/2 1 50 10/1000 sec.Waveform as defined by R.E.A. td 0 0.1 0 1 2 3 4 0.1s 1s 10s 100s 1ms 10ms Time, (ms) Pulse Width Fig. 5 - Maximum non-repetitive Fig.6 - Typical Junction Capacitance surge current 30 10000 TJ = TJ max. 8.3 ms single half sine-wave Bi-directional zero bias 1000 Uni-directional 20 zero bias 100 Uni-directional VRWM 10 10 Bi-directional VRWM O TJ=25 C f=1.0MHz 0 1 1 10 100 1000 1 10 100 Number of cycle at 60 Hz Breakdown Voltage,VBR (V) Company reserves the right to improve product design , functions and reliability without notice. REV:E QW-BTV15 Page 2 Comchip Technology CO., LTD. Peak forward surge current, (A) Peak Pulse Current, (%) Peak Pulse Derating in % of Peak Power or Current, % Peak Power, (kW) Steady State Power Dissipation,(W) Junction Capacitance, (pF)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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