Product Information

D3S190N65B-U

D3S190N65B-U electronic component of D3 Engineering

Datasheet
MOSFET
Manufacturer: D3 Engineering
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.6306 ea
Line Total: USD 4.63

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

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D3S190N65B-U
D3 Engineering

1 : USD 4.6306
10 : USD 1.5604
100 : USD 1.3575
500 : USD 1.2623
1000 : USD 1.1215
2500 : USD 1.105
5000 : USD 1.105
10000 : USD 1.0631
25000 : USD 1.0454

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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Additional Infomation About Product

D3S190N65x 650V, 190m, 15.2A N-Channel Enhancement Mode Super Junction Power MOSFET Package Options Ordering Information Part Number Package Option D3S190N65B-U TO-220 D3S190N65E-U TO-263 TO-220 TO-263 TO-220 FullPak D3S190N65U-U TO-220 FullPak (FP) Device Schematic Drain (Pin 2, Tab) Description TM +FET is an advanced Super Junction Power MOSFET offering excellent efficiency through low R and low gate DS(ON) TM charge. +FET is a rugged device with precision charge Gate (Pin 1) balance implementation designed for demanding uses such as Source enterprise power computing power supplies, motor control, (Pin 3) lighting and other challenging power conversion applications. Features Benefits LOW CONDUCTION LOSSES LOW R DS(ON) HIGH EFFICIENCY FAST SWITCHING EXCELLENT AVALANCHE PERFORMANCE HIGH E AS REL TEST SPEC: JESD-22 HTRB, H3TRB TESTED >3000 HRS Table 1 Key Maximum Parameters Applications Parameter 220/263 220FP Unit POWER FACTOR CORRECTION V @ T 710 710 V DSS jmax SERVER POWER SUPPLIES RDS(on) max < 190 <190 m TELECOM POWER SUPPLIES Qg typ 28 28 nC I @ 25 C 25.8 13.5 A INVERTERS Dmax MOTOR CONTROL Copyright D3 Semiconductor 2017 All Rights Reserved D3S190N65x Contents Contents ............................................................................................................................................................... 2 1. Maximum Ratings ........................................................................................................................................ 3 2. Thermal Characteristics ............................................................................................................................... 4 3. Electrical Characteristics .............................................................................................................................. 5 4. Electrical Characteristics Graphs ................................................................................................................. 7 5. Package Outlines ........................................................................................................................................ 14 6. Revision History ......................................................................................................................................... 17 7. Resources ................................................................................................................................................... 17 8. Patents, Copyrights and Trademarks ......................................................................................................... 17 9. Legal Disclaimer ......................................................................................................................................... 17 2 Copyright D3 Semiconductor 2017 All Rights Reserved

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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