KBPC3506T/W thru KBPC3510T/W V = 50 V - 1000 V RRM Silicon Bridge I = 35 A F Rectifier Features High efficiency Types up to 1000 V V KBPC-T/W Package RRM Silicon junction Metal case Mechanical Data Case: Mounted in the bridge encapsulation Mounting position: Hole for 10 screw Polarity: Marked on case Maximum ratings, at T = 25 C, unless otherwise specified (KBPCXXXXT uses KBPC-T package while KBPCXXXXW j uses KBPC-W package) Parameter Symbol Conditions KBPC3506T/W KBPC3508T/W KBPC3510T/W Unit Repetitive peak reverse voltage V 600 800 1000 V RRM V 420 560 700 RMS reverse voltage V RMS DC blocking voltage V 600 800 1000 V DC I T 55 C Continuous forward current 35 35 35 A F C Surge non-repetitive forward I T = 25 C, t = 8.3 ms 400 400 400 A F,SM C p current, Half Sine Wave Operating temperature T -55 to 150 -55 to 150 -55 to 150 C j T -55 to 150 -55 to 150 -55 to 150 Storage temperature C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions KBPC3506T/W KBPC3508T/W KBPC3510T/W Parameter Symbol Unit V I = 17.5 A, T = 25 C 1.1 1.1 1.1 V Diode forward voltage F F j V = 50 V, T = 25 C 5 5 5 R j I Reverse current A R V = 50 V, T = 100 C 500 500 500 R j Thermal characteristics Thermal resistance, junction - R 1.4 1.4 1.4 C/W thJC case www.genesicsemi.com 1KBPC3506T/W thru KBPC3510T/W www.genesicsemi.com 2