Product Information

RM24C256C-LSNI-B

RM24C256C-LSNI-B electronic component of Dialog Semiconductor

Datasheet
EEPROM 256K 1.65V EEPROM
Manufacturer: Dialog Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

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Availability Price Quantity
0 - WHS 1

MOQ : 7644
Multiples : 1

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RM24C256C-LSNI-B
Dialog Semiconductor

7644 : USD 0.2892
76440 : USD 0.2773
764400 : USD 0.2718
N/A

Obsolete
0 - WHS 2

MOQ : 98
Multiples : 98

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RM24C256C-LSNI-B
Dialog Semiconductor

98 : USD 0.4931
196 : USD 0.3956
490 : USD 0.3835
980 : USD 0.3713
2450 : USD 0.3591
N/A

Obsolete
0 - WHS 3

MOQ : 98
Multiples : 98

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RM24C256C-LSNI-B
Dialog Semiconductor

98 : USD 0.4747
196 : USD 0.4595
294 : USD 0.4272
588 : USD 0.4234
1078 : USD 0.417
2548 : USD 0.417
5096 : USD 0.4044
N/A

Obsolete
0 - WHS 4

MOQ : 1
Multiples : 1

Stock Image

RM24C256C-LSNI-B
Dialog Semiconductor

1 : USD 1.1771
5 : USD 0.5494
60 : USD 0.5167
N/A

Obsolete
0 - WHS 5

MOQ : 22
Multiples : 22

Stock Image

RM24C256C-LSNI-B
Dialog Semiconductor

22 : USD 0.7314
N/A

Obsolete

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Additional Infomation About Product

RM24C256C-L 256-Kbit 1.65V Minimum Non-volatile Serial EEPROM 2 I C Bus Preliminary Datasheet Features Memory array: 256Kbit non-volatile serial EEPROM memory Single supply voltage: 1.65V - 3.6V 2 2-wire I C interface 2 Compatible with I C bus modes: -100kHz -400kHz -1MHz Page size: 64 bytes -Byte and Page Write from 1 to 64 bytes Low Energy Byte Write -Byte Write consuming 50 nJ Low power consumption -0.25 mA active Read current -1.0 mA active Write current -1.0 A Standby current Fast Write -Page Write in 3 ms (64 byte page) -Byte Write within 60 s Random and sequential Read modes Industrys lowest read cycle latency Unlimited read cycles Write protect of the whole memory array 8-lead SOIC, 8-lead TSSOP, 8-pad UDFN, and 6-ball WLCSP packages RoHS-compliant and halogen-free packaging Data Retention: >40 years at 125C Endurance: 100,000 Write Cycles (for both byte and page write cycles) - No degradation across temperature range Industrial Operating Temperature: -40C to 85C No data loss under UV exposure on bare die or WLCSP Based on Adesto s proprietary CBRAM technology Description The Adesto RM24C256C-L is a 256Kbit, serial EEPROM device that utilizes Adesto s CBRAM resistive memory technology. The memory devices use a single low-voltage supply ranging from 1.65V to 3.6V. 2 2 The Adesto I C device is accessed through a 2-wire I C compatible interface consisting of a Serial Data (SDA) and Serial Clock (SCL). The maximum clock (SCL) frequency is 1MHz. The devices have both byte write and page write capability. Page DS-RM24C256C-L081F11/2016write is 64 bytes. The Byte Write operation of CBRAM-based products consumes only 10% of the energy consumed by a Byte Write operation of EEPROM devices of similar size. Adesto s EEPROM endurance can be as much as 40X higher than industry standard EEPROM devices operating in byte write mode at 85C. Unlike EEPROMs based on floating gate technology (which require read-modify-write on a whole page for every write operation) CBRAM write endurance is based on the capability to write each byte individually, irrespective of whether the user writes single bytes or an entire page. Additionally, unlike floating gate technology, CBRAM does not experience any degradation of endurance across the full temperature range. By contrast, in order to modify a single byte, most EEPROMs modify and write full pages of 32, 64 or 128 bytes. This provides significantly less endurance for floating gate devices used in byte write mode when compared to page write mode. The Page Write operation of CBRAM-based products is 4-6 times faster than the Page Write operation of similar EEPROM devices. Both random and sequential reads are available. Sequential reads are capable of reading the entire memory in one operation. External address pins permit up to eight devices on the same data bus. The devices are available in standard 8-pin SOIC and TSSOP, UDFN and WLCSP packages. RM24C256C-L 2 DS-RM24C256C-L081F11/2016

HS Compliance

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

Dialog Semiconductor may also be referenced as

ADESTO
Adesto Technologies
Dialog Semiconductor GmbH
DLG
Echelon / Adesto
Echelon Corporation

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