Product Information

RM24C64C-BTAC-B

RM24C64C-BTAC-B electronic component of Dialog Semiconductor

Datasheet
EEPROM 8-TSSOP, 1.65V, TUBE, I2C
Manufacturer: Dialog Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 13400
Multiples : 1

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RM24C64C-BTAC-B
Dialog Semiconductor

13400 : USD 0.7644
134000 : USD 0.7267
1340000 : USD 0.5132
6700000 : USD 0.4109
N/A

Obsolete
0 - WHS 2

MOQ : 100
Multiples : 100

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RM24C64C-BTAC-B
Dialog Semiconductor

100 : USD 0.4687
200 : USD 0.4017
500 : USD 0.3896
1000 : USD 0.3835
2500 : USD 0.3774
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

Stock Image

RM24C64C-BTAC-B
Dialog Semiconductor

1 : USD 1.6164
10 : USD 0.8192
100 : USD 0.5202
500 : USD 0.5168
1000 : USD 0.4976
2000 : USD 0.4637
10000 : USD 0.4435
N/A

Obsolete
0 - WHS 4

MOQ : 3
Multiples : 1

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RM24C64C-BTAC-B
Dialog Semiconductor

3 : USD 0.3234
10 : USD 0.289
11 : USD 0.2019
149 : USD 0.1842
N/A

Obsolete
0 - WHS 5

MOQ : 42
Multiples : 1

Stock Image

RM24C64C-BTAC-B
Dialog Semiconductor

42 : USD 0.3103
50 : USD 0.2791
100 : USD 0.2512
250 : USD 0.2261
500 : USD 0.2035
1000 : USD 0.1871
N/A

Obsolete

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Additional Infomation About Product

RM24C64C 64Kbit 2.7V Minimum Non-volatile Serial Memory 2 I C Bus Features Memory array: 64Kbit EEPROM-compatible serial memory Single supply voltage: 2.7V - 3.6V 2 2-wire I C interface 2 Compatible with I C bus modes: -100kHz -400kHz Page size: 32 byte -Byte and Page Write from 1 to 32 bytes Low Energy Byte Write -Byte Write consuming 60nJ Low power consumption -1mA active Read current -1.5mA active Write current -5A Standby current Fast Page and Byte Write -Page Write in 1ms -Byte Write in 50s Random and sequential Read modes Write protect of the whole memory array 8-lead SOIC and TSSOP packages RoHS-compliant and halogen-free packaging Based on Adesto s proprietary CBRAM technology Data Retention: 10 years Endurance: 25,000 Write Cycles Unlimited Read Cycles Description The MavriqRM24C64C is an EEPROM-compatible, 64Kbit non-volatile serial memory utilizing Adesto s CBRAM resistive memory technology. The memory devices use a single low-voltage supply ranging from 2.7V to 3.6V. 2 2 The Adesto I C device is accessed through a 2-wire I C compatible interface consisting of a Serial Data (SDA) and Serial Clock (SCL). The maximum clock (SCL) frequency is 400KHz. The devices have both byte write and page write capability. Page write is up to 32 bytes. The Byte Write operation of Mavriq serial memory consumes only 10% of the energy consumed by a Byte Write operation of EEPROM devices of similar size. The Page Write operation of Mavriq memory is 4-6 times faster than the Page Write operation of similar EEPROM devices. Both random and sequential reads are available. Sequential reads are capable of reading the entire memory in one operation. External address pins permit up to eight devices on the same data bus. Devices are available in standard 8-pin SOIC and TSSOP packages. DS-RM24C64C057F1/20181. Block Diagram Figure 1-1. Block Diagram RM24C64C 2 DS-RM24C64C057F1/2018

HS Compliance

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

Dialog Semiconductor may also be referenced as

ADESTO
Adesto Technologies
Dialog Semiconductor GmbH
DLG
Echelon / Adesto
Echelon Corporation

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