RM25C64C-BSNC-B Dialog Semiconductor

RM25C64C 64Kbit 2.7V Minimum Non-volatile Serial Memory SPI Bus Features Memory array: 64Kbit EEPROM-compatible serial memory Single supply voltage: 2.7V - 3.6V Serial peripheral interface (SPI) compatible Supports SPI modes 0 and 3 1.6MHz maximum clock rate for normal read 5MHz maximum clock rate for fast read Page size: 32 byte -Byte and Page Write from 1 to 32 bytes -Byte Write within 25s -Page Write within 1ms Self-timed erase and write cycles Page or chip erase capability 1mA read current, 1.5mA write current, 5A power-down current 8-lead packages RoHS-compliant and halogen-free packaging Based on Adesto s proprietary CBRAM technology Data Retention: 10 years Endurance: 25,000 Write Cycles Unlimited Read Cycles Description The MavriqRM25C64C is an EEPROM-compatible, 64Kbit non-volatile serial memory utilizing Adesto s CBRAM resistive memory technology. The memory device uses a single low-voltage supply ranging from 2.7V to 3.6V. The RM25C64C is accessed through a 4-wire SPI interface consisting of a Serial Data Input (SDI), Serial Data Output (SDO), Serial Clock (SCK), and Chip Select (CS). The maximum clock (SCK) frequency in normal read mode is 1.6MHz. In fast read mode the maximum clock frequency is 5MHz. Writing into the device can be done from one to 32 bytes at a time. All writing is internally self-timed. The device also features an Erase which can be performed on 32-byte pages, or the whole chip. Writing a single byte to the Mavriq RM25C32C device consumes only 10% of the energy required by a Byte Write operation of EEPROM devices of similar size. DS-RM25C64C064F1/20181. Block Diagram Status I/O Buffers and Data Registers Latches & VCC Control Logic Page Buffer SCK SDI Y-Decoder SDO SPI Interface CS WP HOLD Address 64Kb Latch CBRAM & Memory GND Counter Figure 1-1. Block Diagram RM25C64C 2 DS-RM25C64C064F1/2018 X-Decoder