P3 P3 P3 DDTA114YLP 50V PNP PRE-BIASED SMALL SIGNAL TRANSISTOR IN DFN1006 Product Summary Mechanical Data Part Number R1 (NOM) R2 (NOM) Marking Case: X1-DFN1006-3 DDTA114YLP 10k 47k P3 Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Features Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu Epitaxial Planar Die Construction e4 Solderable per MIL-STD-202, Method 208 Ultra-Small Leadless Surface Mount Package Weight: 0.0009 grams (Approximate) Ideally Suited for Automated Assembly Processes Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.Gree Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability X1-DFN1006-3 OUT B 1 3 C OUT IN C 10k 3 (or -supply) (or -supply) B B IN 1 R 1 C E E 47k R 2 + Supply E 2 or GND GND (or +supply) Bottom View Top View Equivalent Inverter Device Symbol Pin-Out Circuit Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DDTA114YLP-7 P3 7 8 3,000 DDTA114YLP-7B P3 7 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DDTA114YLP Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Supply Voltage -50 V V CC Input Voltage +6 to -40 V V IN Output Current -70 mA I O Output (Collector) Current -100 mA I C(MAX) Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) 250 mW P D Power Derating above +25C 2 mW/C P der Thermal Resistance, Junction to Ambient Air (Note 5) R 500 C/W JA (Equivalent to one heated junction of PNP) Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics: Discrete PNP Transistor (Q1) ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Off Characteristics (Note 6) Collector-Base Breakdown Voltage BV -50 V I = -100A, I = 0 CBO C E Collector-Emitter Breakdown Voltage BV -50 V I = -10.0mA, I = 0 CEO C B Collector-Base Cut Off Current I -0.1 A V = -50V, I = 0 CBO CB E -0.1 A Collector-Emitter Cut Off Current, IO(off) ICES VCB = -50V, IB = 0 Emitter-Base Cut Off Current -0.2 mA I V = 5V, I = 0 EBO EB C Input Off Voltage -0.3 V V V = -5V, I = -100A I(off) CC O On Characteristics (Note 6) Input-On Voltage -1.4 V V V = -0.3V, I = I = 1mA I(on) O O C Input Current -0.88 mA I V = -5V I I DC Current Gain 80 h V = -5V, I = -5mA FE CE C Collector-Emitter Saturation Voltage V -0.25 V I = -50mA, I = -2.5mA CE(sat) C B Output On Voltage (Same as V ) V -0.1 -0.3 V I = -0.25mA, I = -5mA CE(sat) O(on) I O Input Resistance R1 7 10 13 k Resistance Ratio (R2/R1) 3.7 4.7 5.7 Small Signal Characteristics Current Gain-Bandwidth Product f 250 MHz V = -10V, I = -5mA, f = 100 MHz T CE E Notes: 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink. 6. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. 2 of 5 DDTA114YLP May 2015 Diodes Incorporated www.diodes.com Document number: DS30807 Rev. 7 - 2