DDTB113ZC-7-F Diodes Incorporated

DDTB113ZC-7-F electronic component of Diodes Incorporated
DDTB113ZC-7-F Diodes Incorporated
DDTB113ZC-7-F Bipolar Transistors - Pre-Biased
DDTB113ZC-7-F  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DDTB113ZC-7-F Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DDTB113ZC-7-F Bipolar Transistors - Pre-Biased are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

Part No. DDTB113ZC-7-F
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - Pre-Biased
Description: Diodes Incorporated Bipolar Transistors - Pre-Biased 200MW 1K 10K
Datasheet: DDTB113ZC-7-F Datasheet (PDF)
Price (USD)
9000: USD 0.0328 ea
Line Total: USD 295.2 
Availability : 232800
  
Ship by Wed. 13 Aug to Tue. 19 Aug
QtyUnit Price
9000$ 0.0328

Availability 1647
Ship by Mon. 11 Aug to Wed. 13 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.275
10$ 0.1663
100$ 0.0996
500$ 0.0701
1000$ 0.0572
3000$ 0.0539
6000$ 0.0396
9000$ 0.0352
24000$ 0.033


Availability 232800
Ship by Wed. 13 Aug to Tue. 19 Aug
MOQ : 9000
Multiples : 3000
QtyUnit Price
9000$ 0.0328


Availability 19
Ship by Wed. 20 Aug to Mon. 25 Aug
MOQ : 10
Multiples : 10
QtyUnit Price
10$ 0.0676
100$ 0.0664
300$ 0.0654
1000$ 0.0436

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
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Height
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Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DDTB113ZC-7-F from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DDTB113ZC-7-F and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DDTB (xxxx) C PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A Complementary NPN Types Available (DDTD) SOT-23 Built-In Biasing Resistors, R1, R2 Dim Min Max Lead, Halogen and Antimony Free, RoHS Compliant TOP VIEW B CGree Device (Notes 2 and 3) A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D Mechanical Data E G D 0.89 1.03 Case: SOT-23 H E 0.45 0.60 Case Material: Molded Plastic. UL Flammability G 1.78 2.05 Classification Rating 94V-0 K M H 2.80 3.00 Moisture Sensitivity: Level 1 per J-STD-020D J J 0.013 0.10 L Terminal Connections: See Diagram K 0.903 1.10 Terminals: Solderable per MIL-STD-202, Method 208 L 0.45 0.61 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe) M 0.085 0.180 Marking Information: See Table Below & Page 3 0 8 Ordering Information: See Page 3 All Dimensions in mm OUT Weight: 0.008 grams (approximate) 3 P/N R1 (NOM) R2 (NOM) Type Code C DDTB113EC 1K 1K P60 R1 DDTB123EC 2.2K 2.2K P61 B DDTB143EC 4.7K 4.7K P62 R2 DDTB114EC 10K 10K P63 DDTB122JC 0.22K 4.7K P64 DDTB113ZC 1K 10K P65 E DDTB123YC 2.2K 10K P66 1 2 DDTB133HC 3.3K 10K P67 DDTB123TC 2.2K OPEN P69 GND(+) IN DDTB143TC 4.7K OPEN P70 Schematic and Pin Configuration DDTB114TC 10K OPEN P71 DDTB114GC 0 10K P72 Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Supply Voltage, (3) to (2) -50 V V CC Input Voltage, (1) to (2) DDTB113EC +10 to -10 DDTB123EC +10 to -12 DDTB143EC +10 to -30 DDTB114EC +10 to -40 V V IN DDTB122JC +5 to -5 DDTB113ZC +5 to -10 DDTB123YC +5 to -12 DDTB133HC +6 to -20 Input Voltage, (1) to (2) DDTB123TC DDTB143TC V -5 V EBO (MAX) DDTB114TC DDTB114GC Output Current All I -500 mA C Power Dissipation P 200 mW D Thermal Resistance, Junction to Ambient Air (Note 1) R 625 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 1. Mounted on FR4 PC Board with recommended pad layout at Electrical Characteristics T = 25C unless otherwise specified R1, R2 Types A Characteristic Symbol Min Typ Max Unit Test Condition DDTB113EC -0.5 DDTB123EC -0.5 DDTB143EC -0.5 DDTB114EC -0.5 V V V = -5V, I = -100A l(off) CC O DDTB122JC -0.5 DDTB113ZC -0.3 DDTB123YC -0.3 DDTB133HC -0.3 Input Voltage V = -0.3V, I = -20mA O O DDTB113EC -3.0 V = -0.3V, I = -20mA O O DDTB123EC -3.0 V = -0.3V, I = -20mA DDTB143EC -3.0 O O V = -0.3V, I = -10mA DDTB114EC -3.0 O O V V l(on) DDTB122JC -3.0 V = -0.3V, I = -30mA O O DDTB113ZC -2.0 V = -0.3V, I = -20mA O O DDTB123YC -2.0 V = -0.3V, I = -20mA O O DDTB133HC -2.0 V = -0.3V, I = -20mA O O Output Voltage -0.3V V V I /I = -50mA/-2.5mA O(on) O l DDTB113EC -7.2 DDTB123EC -3.8 DDTB143EC -1.8 DDTB114EC -0.88 Input Current I mA V = -5V l I DDTB122JC -28 DDTB113ZC -7.2 DDTB123YC -3.6 DDTB133HC -2.4 Output Current -0.5 A I V = -50V, V = 0V O(off) CC I DDTB113EC 33 DDTB123EC 39 DDTB143EC 47 DDTB114EC 56 DC Current Gain G V = -5V, I = -50mA l O O DDTB122JC 47 DDTB113ZC 56 DDTB123YC 56 DDTB133HC 56 Gain-Bandwidth Product* f 200 MHz V = -10V, I = -5mA, f = 100MHz T CE E * Transistor - For Reference Only Electrical Characteristics T = 25C unless otherwise specified R1-Only, R2-Only Types A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BV -50 V I = -50A CBO C Collector-Emitter Breakdown Voltage BV -40 V I = -1mA CEO C I = -50A Emitter-Base Breakdown Voltage DDTB123TC E I = -50A DDTB143TC E -5 V BV EBO DDTB114TC I = -50A E DDTB114GC I = -720A E Collector Cutoff Current -0.5 I A V = -50V CBO CB DDTB123TC -0.5 DDTB143TC -0.5 Emitter Cutoff Current I A V = -4V EBO EB DDTB114TC -0.5 DDTB114GC -580 -300 Collector-Emitter Saturation Voltage -0.3 V V I = -50mA, I = -2.5mA CE(sat) C B DDTB123TC 100 250 600 DDTB143TC 100 250 600 DC Current Transfer Ratio h I = -5mA, V = -5V FE C CE DDTB114TC 100 250 600 DDTB114GC 56 Gain-Bandwidth Product* 200 MHz f V = -10V, I = 5mA, f = 100MHz T CE E * Transistor - For Reference Only DDTB (xxxx) C DS30385 Rev. 7 - 2 2 of 3 Diodes Incorporated www.diodes.com NEW PRODUCT

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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