DDTC114GCA-7-F Diodes Incorporated

DDTC114GCA-7-F electronic component of Diodes Incorporated
DDTC114GCA-7-F Diodes Incorporated
DDTC114GCA-7-F Bipolar Transistors - Pre-Biased
DDTC114GCA-7-F  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DDTC114GCA-7-F Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DDTC114GCA-7-F Bipolar Transistors - Pre-Biased are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

Part No. DDTC114GCA-7-F
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - Pre-Biased
Description: Transistors Switching - Resistor Biased 200MW 10K
Datasheet: DDTC114GCA-7-F Datasheet (PDF)
Price (USD)
14493: USD 0.018 ea
Line Total: USD 260.87 
Availability : 132890
  
Ship by Thu. 07 Aug to Wed. 13 Aug
QtyUnit Price
14493$ 0.018

Availability 132890
Ship by Thu. 07 Aug to Wed. 13 Aug
MOQ : 14493
Multiples : 1
QtyUnit Price
14493$ 0.018


Availability 628
Ship by Tue. 05 Aug to Thu. 07 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.25
10$ 0.1525
100$ 0.0912
500$ 0.0598
1000$ 0.0495
3000$ 0.0407
6000$ 0.0352
9000$ 0.0319
24000$ 0.0286


Availability 186240
Ship by Thu. 07 Aug to Wed. 13 Aug
MOQ : 9000
Multiples : 3000
QtyUnit Price
9000$ 0.0291


Availability 132890
Ship by Thu. 07 Aug to Wed. 13 Aug
MOQ : 14493
Multiples : 1
QtyUnit Price
14493$ 0.018

   
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RoHS - XON
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We are delighted to provide the DDTC114GCA-7-F from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DDTC114GCA-7-F and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DDTC (R2-ONLY SERIES) CA NPN PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) A Built-In Biasing Resistor, R2 only C SOT-23 Lead, Halogen and Antimony Free, RoHS CompliantGree Device (Notes 2 and 3) Dim Min Max TOP VIEW B C A 0.37 0.51 B E B 1.20 1.40 Mechanical Data D C 2.30 2.50 E G D 0.89 1.03 Case: SOT-23 H Case Material: Molded Plastic. UL Flammability E 0.45 0.60 Classification Rating 94V-0 K G 1.78 2.05 M Moisture Sensitivity: Level 1 per J-STD-020D H 2.80 3.00 J Terminal Connections: See Diagram L J 0.013 0.10 Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over K 0.903 1.10 Alloy 42 leadframe). L 0.45 0.61 Marking: Date Code and Marking Code (See Table M 0.085 0.180 Below & Page 4) C Ordering Information: See Page 4 0 8 B Weight: 0.008 grams (approximate) All Dimensions in mm R 2 P/N R2 (NOM) MARKING E DDTC114GCA 10K N26 DDTC124GCA 22K N27 SCHEMATIC DIAGRAM DDTC144GCA 47K N28 DDTC115GCA N29 100K Maximum Ratings @T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 50 V CBO Collector-Emitter Voltage V 50 V CEO Emitter-Base Voltage 5 V V EBO Collector Current I (Max) 100 mA C Power Dissipation P 200 mW D Thermal Resistance, Junction to Ambient Air (Note 1) 625 C/W R JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 1. Mounted on FR4 PC Board with recommended pad layout as shown on Diodes Inc., suggested pad layout document AP02001, which can be found on our website at Electrical Characteristics @T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BV 50 V I = 50A CBO C Collector-Emitter Breakdown Voltage 50 V BV I = 1mA CEO C I = 720A, DDTC114GCA E I = 330A, DDTC124GCA E Emitter-Base Breakdown Voltage 5 V BV EBO I = 160A, DDTC144GCA E I = 72A, DDTC115GCA E Collector Cutoff Current I 0.5 A V = 50V CBO CB DDTC114GCA 300 580 DDTC124GCA 140 260 Emitter Cutoff Current I A V = 4V EBO EB DDTC144GCA 65 130 DDTC115GCA 30 58 Collector-Emitter Saturation Voltage V 0.3 V I = 10mA, I = 0.5mA CE(sat) C B DDTC114GCA 30 DDTC124GCA 56 DC Current Transfer Ratio h I = 5mA, V = 5V FE C CE DDTC144GCA 68 DDTC115GCA 82 Bleeder Resistor (R ) Tolerance R -30 +30 % 2 2 V = 10V, I = -5mA, CE E Gain-Bandwidth Product* f 250 MHz T f = 100MHz * Transistor - For Reference Only DDTC (R2-ONLY SERIES) CA DS30332 Rev. 6 - 2 2 of 4 Diodes Incorporated www.diodes.com NEW PRODUCT

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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