NOT RECOMMENDED FOR NEW DESIGN USE DMP3007LSS DMG4413LSS 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I max Low On-Resistance D BV R max DSS DS(ON) T = +25C Low Input Capacitance A Fast Switching Speed 7.5m V = -10V -12A GS -30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 10.2m V = -4.5V -10A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description An Automotive-Compliant Part is Available Under This MOSFET has been designed to minimize the on-state Separate Datasheet (DMG4413LSSQ) resistance (R ) and yet maintain superior switching DS(ON) performance, making it ideal for high efficiency power management Mechanical Data applications. Case: SO-8 Case Material: Molded Plastic,Gree Molding Compound. Applications UL Flammability Classification Rating 94V-0 Backlighting Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminal Connections Indicator: See Diagram Below DC-DC Converters Terminals: Finish Matte Tin Annealed over Copper Lead Frame. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) D SO-8 S D D S G S D G D S Top View Top View Pin-out Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMG4413LSS-13 SO-8 2500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See NOT RECOMMENDED FOR NEW DESIGN USE DMP3007LSS DMG4413LSS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C -12 A I A D State -10 T = +70C A Continuous Drain Current (Note 6) V = -10V GS T = +25C -22 A t<10s A I D -17 T = +70C A Steady T = +25C -10 A I A D State -8 T = +70C A Continuous Drain Current (Note 6) V = -4.5V GS T = +25C -18 A t<10s A I D -14 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -45 A DM Maximum Body Diode Continuous Current I -4 A S Thermal Characteristics Characteristic Symbol Value Unit 1.7 T = +25C A Total Power Dissipation (Note 5) P W D 1.1 T = +70C A Steady State 74 Thermal Resistance, Junction to Ambient (Note 5) C/W RJA t<10s 22 T = +25C 2.2 A Total Power Dissipation (Note 6) W PD T = +70C 1.4 A Steady State 56 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 17 C/W Steady State Thermal Resistance, Junction to Case (Note 6) R 2.5 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage -30 V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current -1 A I V = -30V, V = 0V DSS DS GS Gate-Source Leakage 1 A I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage -1.1 -1.6 -2.1 V V V = V , I = -250A GS(TH) DS GS D 6.3 7.5 V = -10V, I = -13A GS D Static Drain-Source On-Resistance R m DS(ON) 7.9 10.2 V = -4.5V, I = -10A GS D Forward Transconductance g 26 S V = -15V, I = -13A fs DS D Diode Forward Voltage V -0.7 -1.0 V V = 0V, I = -2.7A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 4965 pF iss V = -15V, V = 0V DS GS Output Capacitance 1487 pF C oss f = 1.0MHz Reverse Transfer Capacitance 711 pF C rss V = 0V, V = 0V DS GS Gate Resistance R 7.3 G f = 1.0MHz SWITCHING CHARACTERISTICS (Note 8) Total Gate Charge Q 46 G V = -15V, V = -5V DS GS Gate-Source Charge Q 17 nC GS I = -13A D Gate-Drain Charge Q 16 GD Turn-On Delay Time t 15 D(ON) Rise Time t 9 R V = -15V, V = -10V, DS GS ns Turn-Off Delay Time 160 I = -1A, R = 6.0 tD(OFF) D G Fall Time 66 t F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 DMG4413LSS December 2018 Diodes Incorporated www.diodes.com Document number: DS31754 Rev. 7 - 3 NEW PRODUCT