DMN1017UCP3-7 Diodes Incorporated

DMN1017UCP3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. VGS = 3.3V, TA = +25C) Features TR-MOS Technology with the Lowest R : DS(ON) R = 14.1m to Minimize On-State Losses DS(ON) VDSS RDS(ON) Qg Qgd ID CSP with Footprint 1.0mm 1.0mm 12V 14.1m 10.5nC 4.1nC 7.5A Height = 0.29mm for Low Profile Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description For automotive applications requiring specific change This new generation MOSFET is engineered to minimize on-state control (i.e. parts qualified to AEC-Q100/101/200, PPAP losses and switch ultra-fast, making it ideal for high efficiency power capable, and manufactured in IATF 16949 certified transfer. Using Chip-Scale Package (CSP) to increase power density facilities), please contact us or your local Diodes by combining low thermal impedance with minimal R per DS(ON) representative. footprint area. DMN1017UCP3 Marking Information (Note 5) Marking 1 4B = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: I = 2021) M or M = Month (ex: 9 = September) Date Code Key Year 2017 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 Code E I J K L M N O P R S Aug Sep Oct Nov Dec Month Jan Feb Mar Apr May Jun Jul Code 1 2 3 4 5 6 7 8 9 O N D Marking 2 4B = Product Type Marking Code YW = Date Code Marking Y or Y = Year (ex: 1 = 2021) W or W = Week (ex: a = Week 27 z Represents Week 52 and 53) Date Code Key Year 2017 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 Code 7 1 2 3 4 5 6 7 8 9 0 Week 1-26 27-52 53 Code A-Z a-z z Note: 5. The marking code changed to Marking 2 from week 6, 2021. 2 of 8 DMN1017UCP3 February 2021 Diodes Incorporated www.diodes.com Document number: DS39521 Rev. 5 - 2