DMT3003LFG Green 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Max Low R Ensures On-State Losses are Minimized D DS(ON) BV R Max DSS DS(ON) T = +25C Excellent Q R Product (FOM) C GD DS(ON) Advanced Technology for DC-DC Converts 3.2m V = 10V 100A GS Small Form Factor Thermally Efficient Package Enables Higher 30V Density End Products 5.5m V = 4.5V 85A GS Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product 100% UIS (Avalanche) Rated Description Lead-Free Finish RoHS Compliant (Notes 1 & 2) This MOSFET is designed to minimize the on-state resistance Halogen and Antimony Free. Green Device (Note 3) (R ), yet maintain superior switching performance, making it DS(ON) Qualified to AEC-Q101 Standards for High Reliability ideal for high efficiency power management applications. Mechanical Data Applications Case: PowerDI 3333-8 Backlighting Case Material: Molded Plastic,Gree Molding Compound. Power Management Functions UL Flammability Classification Rating 94V-0 DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminal Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate) PowerDI3333-8 D Pin 1 S S 8 1 S G 7 2 G 6 3 D D D 5 4 D S Top View Top View Bottom View Equivalent Circuit Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMT3003LFG-7 2,000/Tape & Reel PowerDI3333-8 DMT3003LFG-13 3,000/Tape & Reel PowerDI3333-8 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMT3003LFG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 30 V V DSS Gate-Source Voltage 20 V V GSS T = +25C 100 C A Continuous Drain Current (Note 6) V = 10V I GS D 90 T = +70C C T = +25C 22 A Continuous Drain Current (Note 5) V = 10V I A GS D 18 T = +70C A Maximum Continuous Body Diode Forward Current (Note 5) 3 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 100 A I DM Avalanche Current, L=1mH 16 A I AS Avalanche Energy, L=1mH E 250 mJ AS Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) 2.4 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 5) 52 C/W R JA Total Power Dissipation (Note 5) 62 W T = +25C P C D Thermal Resistance, Junction to Case (Note 6) R 2 C/W JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 30 V BV V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current 1 A I V = 24V, V = 0V DSS DS GS V = +20V, V = 0V GS DS Gate-Source Leakage I 100 nA GSS V = -16V, V = 0V GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1 3 V V = V , I = 250A GS(TH) DS GS D 2.4 3.2 V = 10V, I = 20A GS D Static Drain-Source On-Resistance m R DS(ON) 4 5.5 V = 4.5V, I = 15A GS D Diode Forward Voltage 0.75 1 V VSD VGS = 0V, IS = 10A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 2,370 C ISS V = 15V, V = 0V, DS GS Output Capacitance 1,360 pF C OSS f = 1MHz Reverse Transfer Capacitance 240 C RSS Gate Resistance 0.6 R V = 0V, V = 0V, f = 1MHz G DS GS 20 Total Gate Charge (V = 4.5V) Q GS G 44 Total Gate Charge (V = 10V) Q GS G nC V = 15V, I = 20A DS D 7 Gate-Source Charge Q GS 8 Gate-Drain Charge Q GD 6.2 Turn-On Delay Time t D(ON) Turn-On Rise Time 4.3 tR V = 15V, V = 10V, DD GS ns Turn-Off Delay Time 21 R = 0.75, R = 3, I = 20A t L G D D(OFF) Turn-Off Fall Time 8 t F Bodyy Diode Reverse Recovery Time 25 ns t RR I = 15A, di/dt = 500A/s F Body Diode Reverse Recovery Charge 37 nC Q RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMT3003LFG June 2016 Diodes Incorporated www.diodes.com Document number: DS37819 Rev. 2 - 2