X-On Electronics has gained recognition as a prominent supplier of DMT8012LSS-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMT8012LSS-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMT8012LSS-13 Diodes Incorporated

DMT8012LSS-13 electronic component of Diodes Incorporated
DMT8012LSS-13 Diodes Incorporated
DMT8012LSS-13 MOSFETs
DMT8012LSS-13  Semiconductors

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See Product Specifications
Part No. DMT8012LSS-13
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET MOSFET BVDSS: 61V-100V
Datasheet: DMT8012LSS-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.1625 ea
Line Total: USD 1.16 
Availability - 1833
Ship by Tue. 03 Jun to Thu. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1833
Ship by Tue. 03 Jun to Thu. 05 Jun
MOQ : 1
Multiples : 1
1 : USD 1.1625
10 : USD 0.785
100 : USD 0.539
500 : USD 0.4653
1000 : USD 0.4191
2500 : USD 0.3762
5000 : USD 0.374

   
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RoHS - XON
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We are delighted to provide the DMT8012LSS-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMT8012LSS-13 and other electronic components in the MOSFETs category and beyond.

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DMT8012LSS 80V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Max 100% Unclamped Inductive Switch (UIS) Test in Production D BV R Max DSS DS(ON) T = +25C High Conversion Efficiency A Low R Minimizes On-State Losses DS(ON) 16.5m @ V = 10V 9.7A GS Low Input Capacitance 80V Fast Switching Speed 20m @ V = 4.5V 8.8A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation N-Channel Enhancement Mode MOSFET is Case: SO-8 designed to minimize R , yet maintain superior switching Case Material: Molded Plastic,Gree Molding Compound. DS(ON) performance. This device is ideal for use in: UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Notebook Battery Power Management Terminal Finish Matte Tin Annealed over Copper Leadframe. Loadswitches Solderable per MIL-STD-202, Method 208 Backlighting Weight: 0.074 grams (Approximate) Power Management Functions DC-DC Converters D S D SO-8 S D G S D G D S Top View Equivalent Circuit Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMT8012LSS-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMT8012LSS Maximum Ratings (@T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 80 V V DSS Gate-Source Voltage 20 V V GSS Steady T = +25C 9.7 A A I D State 7.8 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 11.6 A t<10s I A D 9.3 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) 3 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 80 A I DM Avalanche Current, L=0.1mH 11.6 A I AS Avalanche Energy, L=0.1mH E 10.2 mJ AS Thermal Characteristics (@T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) 1.5 W P D Steady State 80 C/W Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 48 C/W Total Power Dissipation (Note 6) 2 W P D Steady State 53 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 37 C/W Thermal Resistance, Junction to Case (Note 6) 6.5 C/W R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 80 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 64V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1 3 V V = V , I = 250A GS(TH) DS GS D 12.7 16.5 V = 10V, I = 12A GS D Static Drain-Source On-Resistance R m DS(ON) 15 20 V = 4.5V, I = 6A GS D Diode Forward Voltage V 0.9 1.2 V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 1,949 ISS V = 40V, V = 0V, DS GS Output Capacitance 177 pF C OSS f = 1MHz Reverse Transfer Capacitance 10 C RSS Gate Resistance 0.7 R V = 0V, V = 0V, f = 1MHz G DS GS 15 Total Gate Charge (V = 4.5V) Q GS G Total Gate Charge (V = 10V) Q 34 GS G nC VDS = 40V, ID = 12A Gate-Source Charge Q 6 GS Gate-Drain Charge Q 4.5 GD Turn-On Delay Time t 4.9 D(ON) Turn-On Rise Time t 3.8 V = 40V, V = 10V, R DD GS ns Turn-Off Delay Time 16.5 t I = 12A, R = 1.6 D(OFF) D G Turn-Off Fall Time 3.5 t F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz. copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz. copper, with 1-inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMT8012LSS May 2016 Diodes Incorporated www.diodes.com Document number: DS38164 Rev. 3 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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