DSR8A600 Green 8A DIODESTAR RECTIFIER Product Summary Features and Benefits Low V minimises Boost Diode conduction loses V (V) t (nS) I (A) F F typ rr typ RM typ V (V) I (A) RRM O +25C +25C +25C Very fast trr reduces MOSFET PFC switching losses 600 8 2.3 20 6.9 Soft switching ensures ringing and EMI are reduced Low Q and I minimize boost diode recovery losses rr RM Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Application TM Case: TO220AC The DIODESTAR DSR8A600 is designed specifically for use as a Case Material: Molded Plastic, Green Molding compound. boost diode in Power Factor Correction (PFC) applications. Its soft UL Flammability Classification Rating 94V-0 fast switching characteristics make it ideal for use in hard switching Terminals: Matte Tin Finish annealed over Copper leadframe. and Continuous Conduction Mode (CCM) PFC circuits. Solderable per MIL-STD-202, Method 208 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Weight: 1.75 grams (approximate) Base Cathode Cathode 1 Cathode 1 3 Anode Cathode Anode TO220AC Package Package Pin Out Configuration Ordering Information (Note 4) Part Number Case Packaging DSR8A600 TO220AC 50 pieces/tube Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DSR8A600 Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 600 V VRWM DC Blocking Voltage V RM Average Rectified Output Current T +101C I 8 A O Non-Repetitive Peak Forward Surge Current 8.3ms 65 A I FSM Single Half Sine-Wave Superimposed on Rated Load Non-Repetitive Peak Forward Surge Current 10ms 60 A I FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance, Junction to Lead (Note 4) R 2 C/W JL Typical Thermal Resistance, Junction to Ambient (Note 5) R 62 C/W JA Storage Temperature Range T -55 to +150 C STG Maximum Operating Junction Temperature T +150 C J Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition 2.3 3.2 I = 8A, T = +25C F J Forward Voltage Drop V VF 1.6 I = 8A, T = +125C F J <1 20 V = 600V, T = +25C R J Leakage Current (Note 6) A I R 100 V = 600V, T = +125C R J Reverse Recovery Time 25 30 ns t I = 1A, I = 0.5A, I = 0.25A , RG1 rr F R RR Reverse Recovery Time t 20 ns rr I = 8A, dl/dt = 500A/s, F Reverse Recovery Current I 6.9 A RM V = 390V, T = +25C R J Reverse Recovery Charges Q 85 nC rr Reverse Recovery Time 37 ns trr I = 8A, dl/dt = 500A/s, F Reverse Recovery Current 8.3 A I RM V = 390V, T = +125C R J Reverse Recovery Charges 161 nC Q rr Junction Capacitance C 7.7 pF 100.0V, 1MHz J Notes: 4. Measured from Cathode Tab. 5. Device free standing with no Heat sink. 6. Short duration pulse test used to minimize self-heating effect. 2 of 6 July 2014 DSR8A600 Diodes Incorporated www.diodes.com Document number: DS36247 Rev. 3 - 2 NEW PRODUCT