MMBTA63 / MMBTA64 PNP SURFACE MOUNT DARLINGTON TRANSISTOR Features Epitaxial Planar Die Construction A Complementary NPN Types Available C SOT-23 (MMBTA13 /MMBTA14) Dim Min Max Ideal for Low Power Amplification and Switching TOP VIEW B C A 0.37 0.51 High Current Gain B 1.20 1.40 Lead, Halogen and Antimony Free, RoHS Compliant BEGree Device (Notes 3 and 4) C 2.30 2.50 D E G D 0.89 1.03 Mechanical Data H E 0.45 0.60 Case: SOT-23 G 1.78 2.05 K M Case Material: Molded Plastic. UL Flammability H 2.80 3.00 J Classification Rating 94V-0 L J 0.013 0.10 D Moisture Sensitivity: Level 1 per J-STD-020D K 0.903 1.10 Terminals: Solderable per MIL-STD-202, Method 208 C L 0.45 0.61 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram M 0.085 0.180 MMBTA63 Marking K2E, K3E See Page 3 0 8 MMBTA64 Marking K3E See Page 3 All Dimensions in mm Ordering & Date Code Information: See Page 3 B E Weight: 0.008 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V -30 V CBO Collector-Emitter Voltage -30 V V CEO Emitter-Base Voltage -10 V V EBO Collector Current - Continuous (Note 1) I -500 mA C Power Dissipation (Note 1) P 300 mW D Thermal Resistance, Junction to Ambient (Note 1) 417 C/W R JA Operating and Storage Temperature Range -55 to +150 T , T C J STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Collector-Emitter Breakdown Voltage V -30 V I = -100A V = 0V (BR)CEO C BE Collector Cutoff Current I -100 nA V = -30V, I = 0 CBO CB E Emitter Cutoff Current I -100 nA V = -10V, I = 0 EBO EB C ON CHARACTERISTICS (Note 2) I = -10mA, V = -5.0V DC Current Gain MMBTA63 5,000 C CE MMBTA64 10,000 I = -10mA, V = -5.0V C CE h FE MMBTA63 10,000 I = -100mA, V = -5.0V C CE MMBTA64 20,000 I = -100mA, V = -5.0V C CE Collector-Emitter Saturation Voltage -1.5 V V I = -100mA, I = -100A CE(SAT) C B Base-Emitter Saturation Voltage V -2.0 V I = -100mA, V = -5.0V BE(SAT) C CE SMALL SIGNAL CHARACTERISTICS V = -5.0V, I = -10mA, CE C Current Gain-Bandwidth Product 125 MHz f T f = 100MHz Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at 400 1.20 1.15 350 1.10 1.05 300 1.00 0.95 250 0.90 0.85 0.80 200 0.75 150 0.70 0.65 100 0.60 0.55 0.50 50 0.45 0 0.40 0 175 200 1 10 100 1,000 25 50 75 100 125 150 I , COLLECTOR CURRENT (mA) T , AMBIENT TEMPERATURE (C) C A Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current Fig. 1, Max Power Dissipation vs. Ambient Temperature 10,000,000 1.6 1.5 1.4 1.3 1,000,000 1.2 1.1 1.0 100,000 0.9 0.8 0.7 10,000 0.6 0.5 0.4 1,000 0.3 0.2 100 0.1 110 100 1,000 0.1 110 100 I , COLLECTOR CURRENT (mA) C I , COLLECTOR CURRENT (mA) C Fig. 3, DC Current Gain vs. Collector Current Fig. 4, Base Emitter Voltage vs. Collector Current 1,000 100 10 1 1 10 100 I , COLLECTOR CURRENT (mA) C Fig. 5, Gain Bandwidth Product vs. Collector Current DS30055 Rev. 8 - 2 2 of 3 MMBTA63 / MMBTA64 Diodes Incorporated www.diodes.com h, DC CURRENT GAIN FE P , POWER DISSIPATION (mW) D f, GAIN BANDWIDTH PRODUCT (MHz) T V, COLLECTOR TO EMITTER CE(SAT) SATURATION VOLTAGE (V) V, BASE EMITTER VOLTAGE (V) BE(ON)