X-On Electronics has gained recognition as a prominent supplier of ZXMHC10A07T8TA MOSFETs across the USA, India, Europe, Australia, and various other global locations. ZXMHC10A07T8TA MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.
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ZXMHC10A07T8 Green COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Features I max D 2 x N + 2 x P Channels in a SOIC Package Device BV R max DSS DS(ON) T = +25C A Low On-Resistance 0.7 V = 10V 1.4A GS Low Input Capacitance N-Channel 100V 0.9 V = 6V 1.1A GS Fast Switching Speed 1.0 V = -10V -1.3A Lead-Free Finish RoHS Compliant (Notes 1 & 2) GS P-Channel -100V Halogen and Antimony Free. Green Device (Note 3) 1.45 V = -6V -0.9A GS Mechanical Data Description Case: SM-8 (8 LEAD SOT223) This new generation complementary MOSFET H-Bridge features low Case Material: Molded Plastic,Gree Molding Compound on-resistance achievable with low gate drive. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe DC Motor Control Solderable per MIL-STD-202, Method 208 DC-AC Inverters Weight: 0.117 grams (Approximate) SM-8 PIN1 G3 G4 S2 S3 D3 D4 G2 S1 S4 G1 D1 D2 Top View Top View Internal Schematic Pin Configuration Ordering Information (Note 4) Part Number Reel Size Tape Width Quantity per Reel ZXMHC10A07T8TA 7 12mm 1,000 units Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See ZXMHC10A07T8 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol N-channel P-channel Units Drain-Source Voltage V 100 -100 V DSS Gate-Source Voltage V 20 20 V GSS T = +25C (Note 6) A 1.1 -0.9 Steady 0.9 -0.8 A Continuous Drain Current, V = 10V (Note 8) T = +70C (Note 6) I GS A D State 1.0 -0.8 T = +25C (Note 5) A Maximum Body Diode Forward Current (Note 6) I 2.3 -2.2 A S Pulsed Drain Current (Note 7) I 5.2 -4.5 A DM Pulsed Source Current (Note 7) I 5.2 -4.5 A SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 8) 1.3 W T = +25C (Note 5) P A D Linear Derating Factor 10.4 mW/C 1.3 W Total Power Dissipation (Note 8) T = +25C (Note 6) P A D mW/C Linear Derating Factor Steady State (Note 5) 94.5 C/W Thermal Resistance, Junction to Ambient (Note 8) R JA Steady State (Note 6) 73.3 C/W Operating and Storage Temperature Range -55 to +150 C T T J, STG Notes: 5. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions, with the heat sink split into two equal areas one for each drain connection. 6. For a device surface mounted on FR4 PCB measured at t 10 seconds. 7. Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D = 0.02, pulse width 300s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. 8. For device with one active die. 2 of 10 ZXMHC10A07T8 March 2015 Diodes Incorporated www.diodes.com Document number: DS33510 Rev. 4 - 2 NEW PRODUCT ADVANCE INFORMATION
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