BAV756DW Diotec

BAV756DW electronic component of Diotec
BAV756DW Diotec
BAV756DW Small Signal Switching Diodes
BAV756DW  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BAV756DW Small Signal Switching Diodes across the USA, India, Europe, Australia, and various other global locations. BAV756DW Small Signal Switching Diodes are a product manufactured by Diotec. We provide cost-effective solutions for Small Signal Switching Diodes, ensuring timely deliveries around the world.

Part No. BAV756DW
Manufacturer: Diotec
Category: Small Signal Switching Diodes
Description: Small Signal Switching Diodes Small Signal Diode, SOT-363, 90V, 0.2A, 150C
Datasheet: BAV756DW Datasheet (PDF)
Price (USD)
1: USD 0.3275 ea
Line Total: USD 0.33 
Availability : 4721
  
Ship by Wed. 30 Jul to Fri. 01 Aug
QtyUnit Price
1$ 0.3275
10$ 0.2362
100$ 0.1896
500$ 0.1397
1000$ 0.1221
3000$ 0.0924
9000$ 0.0605
24000$ 0.0594
45000$ 0.0517

Availability 4721
Ship by Wed. 30 Jul to Fri. 01 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.3275
10$ 0.2362
100$ 0.1896
500$ 0.1397
1000$ 0.1221
3000$ 0.0924
9000$ 0.0605
24000$ 0.0594
45000$ 0.0517


Availability 2861
Ship by Wed. 30 Jul to Fri. 01 Aug
MOQ : 10
Multiples : 10
QtyUnit Price
10$ 0.1078
50$ 0.0812
250$ 0.0728
350$ 0.056
950$ 0.0532

   
Manufacturer
Product Category
Product
Mounting Style
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Package / Case
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BAV756DW from our Small Signal Switching Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAV756DW and other electronic components in the Small Signal Switching Diodes category and beyond.

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BAS16DW, BAV70DW, BAV756DW, MMBD4448SDW BAS16DW, BAV70DW, BAV756DW, MMBD4448SDW I = 150 mA V = 75 V FAV RRM V < 0.715 V I = 2 A F1 FSM1 SMD Small Signal Diode Arrays Tjmax = 150C trr < 4 ns SMD Kleinsignal-Dioden-Arrays Version 2021-11-15 SOT-363 Typical Applications Typische Anwendungen Signal processing Signalverarbeitung 6 5 High-speed Switching Schnelles Schalten 4 Rectifying Gleichrichten Commercial / industrial grade Standardausfhrung 1 1 Suffix -Q: AEC-Q101 compliant ) Suffix -Q: AEC-Q101 konform ) 1 1 1 2 Suffix -AQ: in AEC-Q101 qualification ) Suffix -AQ: in AEC-Q101 Qualifikation ) 3 Features Besonderheiten Very low t , C and I Sehr niedriges t , C und I rr j R rr j R Compliant to RoHS , Konform zu RoHS, REACH, 1 1 REACH, Conflict Minerals ) Konfliktmineralien ) 1 1 Mechanical Data ) Mechanische Daten ) 1 SPICE Model & STEP File ) Taped and reeled 3000 / 7 Gegurtet auf Rolle Marking Code Weight approx. 0.01 g Gewicht ca. See below XX Siehe unten XX Case material UL 94V-0 Gehusematerial HS Code 85411000 Solder & assembly conditions 260C/10s Lt- und Einbaubedingungen MSL = 1 1 = A1 1 = A1 BAS16DW/-AQ BAV70DW 2 = A2 2 = A2 KA A4 3 = A3 3 = C3/C4 4 = C3 4 = A3 3 Single 2x Common 5 = C2 5 = A4 Diodes Cathode 6 = C1 6 = C1/C2 1 = A1 1 = A1 BAV756DW MMBD4448SDW 2 = C2 2 = C2 B7 KB 3 = A2/A3 3 = A4/C3 4 = C3 4 = A3 2x Common 4 in Bridge 5 = A4 5 = C4 Cathode/Anode Configuration 6 = C1/C4 6 = A1/C2 1 2 Maximum ratings ) Grenzwerte ) 2 Power dissipation (per device) Verlustleistung (pro Bauteil) P 200 mW ) tot 3 Maximum average forward current Dauergrenzstrom I 150 mA ) FAV 3 Repetitive peak forward current Periodischer Spitzenstrom IFRM 300 mA ) Peak forward surge current t 1 s 0.5 A p I FSM Stostrom in Fluss-Richtung t 1 s 2 A p Repetitive peak reverse voltage MMBD4448SDW, BAS16DW/-AQ 75 V Periodische Spitzensperrspannung BAV756DW V 90 V RRM BAV70DW 100 V Junction temperature Sperrschichttemperatur T j -55+150C Storage temperature Lagerungstemperatur T S 1 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches 1 T = 25C and per diode, unless otherwise specified T = 25C und pro Diode, wenn nicht anders angegeben A A 2 2 2 Mounted on 3 mm copper pads per terminal Montage auf 3 mm Kupferbelag (Ltpads) je Anschluss Diotec Semiconductor AG BAS16DW, BAV70DW, BAV756DW, MMBD4448SDW Characteristics Kennwerte BAS16DW/ BAV70DW MMBD4448SDW -AQ BAV756DW Forward voltage 1 mA < 715 mV < 715 mV Durchlass-Spannung 5 mA 620 ... 720 mV 1 ) 10 mA < 855 mV < 855 mV < 855 mV T = 25C I = V j F F 50 mA < 1.0 V < 1.0 V 100 mA < 1.0 V 150 mA < 1.25 V < 1.25 V < 1.25 V Leakage current 20 V < 30 nA < 25 nA Sperrstrom 25 V < 30 nA T = 25C V = I j R R 1 ) 75 V < 1.0 A 80 V < 0.5 A < 100 nA 25 V < 30 A < 30 A T = 150C V = 75 V I < 50 A < 30 A < 50 A j R R 80 V < 100 A Junction capacitance 2 V = 0 V, f = 1 MHz C typ. 2 pF ) R T Sperrschichtkapazitt Reverse recovery time I = 10 mA ber/through F 2 t < 4 ns ) rr Sperrverzug I = 10 mA bis/to I = 1 mA R R Thermal resistance junction to ambient 3 R < 400 K/W ) thA Wrmewiderstand Sperrschicht Umgebung Dimensions - Mae mm 1 120 % A 100 -1 10 80 T = 125C j -2 60 10 40 T = 25C j -3 10 20 I F P Disclaimer: tot -4 See data book page 2 or website 10 0 0 V 0.4 0.6 0.8 1.0 V 1.4 0 T 50 100 150 C Haftungssauschluss: A F 3 Forward characteristics (typical values) Power dissipation versus ambient temperature ) Siehe Datenbuch Seite 2 oder Internet 3 Durchlasskennlinien (typische Werte) Verlustleistung in Abh. von d. Umgebungstemp. ) 1 Tested with pulses t = 300 s, duty cycle 2% p Gemessen mit Impulsen tp = 300 s, Schaltverhltnis 2% 2 Valid per diode Gltig pro Diode 2 2 3 Mounted on 3 mm copper pads per terminal Montage auf 3 mm Kupferbelag (Ltpads) je Anschluss 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Diotec Electronics
DIOTEC SEMICONDUCTOR
DIOTEC SEMICONDUCTOR AG
Diotec Semiconductors
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