SI2302 DOWO

SI2302 electronic component of DOWO
SI2302 DOWO
SI2302 MOSFETs
SI2302  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI2302 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2302 MOSFETs are a product manufactured by DOWO. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SI2302
Manufacturer: DOWO
Category: MOSFETs
Description: 20V 3.3A 0.7W 29mΩ@4.5V,3A 0.75V@250uA 80pF@10V N Channel 300pF@10V 4nC@4.5V -55℃~+150℃@(Tj) SOT-23 MOSFETs ROHS
Datasheet: SI2302 Datasheet (PDF)
Price (USD)
20: USD 0.0568 ea
Line Total: USD 1.14 
Availability : 2056
  
Ship by Fri. 29 Aug to Wed. 03 Sep
QtyUnit Price
20$ 0.0568
200$ 0.044
600$ 0.0277
3000$ 0.022
9000$ 0.0196
21000$ 0.0182

Availability 2056
Ship by Fri. 29 Aug to Wed. 03 Sep
MOQ : 20
Multiples : 20
QtyUnit Price
20$ 0.0568
200$ 0.044
600$ 0.0277
3000$ 0.022
9000$ 0.0196
21000$ 0.0182

   
Manufacturer
Product Category
Category
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We are delighted to provide the SI2302 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2302 and other electronic components in the MOSFETs category and beyond.

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The DOWO SI2302 is a SOT-23-packaged N-channel MOSFET with RoHS certification. It has a 20V 3.3A 0.7W rating, a 29mO@4.5V,3A 0.75V@250uA drain-source on-state resistance, an 80pF@10V gate-source capacitance, a300pF@10V drain-source capacitance, and a 4nC@4.5V gate-source charge. It can operate over a range of -55°C to +150°C at a junction temperature (Tj).

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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