DCR850G26
Phase Control Thyristor
DS6040-1 April 2011 (LN28251)
KEY PARAMETERS
FEATURES
V 2600 V
DRM
Double Side Cooling
I 850 A
T(AV)
High Surge Capability
I 11000 A
TSM
dV/dt* 1000 V/s
dI/dt 200 A/s
* Higher dV/dt selections available
APPLICATIONS
High Power Drives
High Voltage Power Supplies
Static Switches
VOLTAGE RATINGS
Part and Repetitive Peak Conditions
Ordering Voltages
Number V and V
DRM RRM
V
DCR850G26 2600 T = -40C to 125C,
vj
DCR850G24 2400 I = I = 60mA,
DRM RRM
DCR850G22 2200 V , V t = 10ms,
DRM RRM p
DCR850G20 2000 V & V =
DSM RSM
V & V +100V
DRM RRM
Outline type code: G
respectively
(See Package Details for further information)
Lower voltage grades available.
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DCR850G26
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
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DCR850G26
SEMICONDUCTOR
CURRENT RATINGS
T = 60C unless stated otherwise
case
Symbol Parameter Test Conditions Max. Units
Double Side Cooled
I Mean on-state current Half wave resistive load 850 A
T(AV)
I RMS value - 1330 A
T(RMS)
I Continuous (direct) on-state current - 1200 A
T
SURGE RATINGS
Symbol Parameter Test Conditions Max. Units
I Surge (non-repetitive) on-state current 10ms half sine, T = 125C 11.0 kA
TSM case
2 2 2
I t I t for fusing V = 0 0.605 MA s
R
THERMAL AND MECHANICAL RATINGS
Symbol Parameter Test Conditions Min. Max. Units
R Thermal resistance junction to case Double side cooled DC - 0.035 C/W
th(j-c)
R Thermal resistance case to heatsink Double side cooled DC - 0.008 C/W
th(c-h)
T Virtual junction temperature Blocking V / - 125 C
vj DRM VRRM
T Storage temperature range -40 140 C
stg
F Clamping force 12 18 kN
m
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