EMB09P03V EMC

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of EMB09P03V MOSFETs across the USA, India, Europe, Australia, and various other global locations. EMB09P03V MOSFETs are a product manufactured by EMC. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.

EMB09P03V

Manufacturer:

EMC

Category:

MOSFETs

Description:

MOSFET P Channel 30V 24A(Tc) 3V @ 250uA 9.5mO @ 13A,10V EDFN3*3 RoHS

Datasheet:

EMB09P03V Datasheet (PDF)

Shipping Charges:

Click here for details

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Price (USD)

50: USD 0.0169 ea
Line Total: USD 0.84

Availability : 0

Qty	Unit Price
50	$ 0.0169
500	$ 0.0142
1500	$ 0.0127
4000	$ 0.0114
24000	$ 0.0107
48000	$ 0.0104

EMB09P03V More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability0

Ship by Wed. 08 Jul to Tue. 14 Jul

MOQ : 50
Multiples : 1

Qty	Unit Price
50	$ 0.0169
500	$ 0.0142
1500	$ 0.0127
4000	$ 0.0114
24000	$ 0.0107
48000	$ 0.0104

Specifications

Manufacturer EMCEMC
Product Category MOSFETsMOSFETs
Rohs yy
Package EDFN33EDFN33
Brand Category EmcEmc
Fet Type P ChannelP Channel
Drain To Source Voltagevdss 30 V30 V
Continuous Drain Current Id @ 25°C 24 A (T C)24 A (T C)
Vgsth Max @ Id 3V @ 250uA3V @ 250uA
Rds On Max @ Id Vgs 9.5mO @ 13A,10V9.5mO @ 13A,10V
Power Dissipation-Max Ta 25°C 2.5 W2.5 W
Drain Source Voltage Vdss 30 V30 V
Continuous Drain Current Id 24 A24 A
Drain Source On Resistance Rdson@Vgs Id 9.5 mOhms @10V , 13A9.5 mOhms @10V , 13A
Power Dissipation Pd 2.5 W2.5 W
Gate Threshold Voltage Vgsth@Id 3 V @250uA3 V @250uA
Type P ChannelP Channel

We are delighted to provide the EMB09P03V from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EMB09P03V and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The EMB09P03V with MOSFET P Channel 30V 24A(Tc) 3V @ 250uA 9.5mO @ 13A,10V EDFN3*3 RoHS manufactured by EMC is a type of metal-oxide field effect transistor (MOSFET) designed to provide a high electrical current capacity with a low current drain. It is made up of a highly doped P-channel region sandwiched between a pair of N-channel regions. This type of structure enables the EMB09P03V to have enhanced current carrying abilities and significantly lower on-state resistance than a traditional MOSFET. Additionally, it is constructed using a EDFN3*3 RoHS package as well as RoHS compliant lead material, which improves its reliability and environmental compatibility. Its rated voltage is 30 volts, its current capacity is 24A(Tc), and its gate-source voltage is 3V @ 250uA. Its drain-source on-state resistance is 9.5mO @ 13A and 10V.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

EMCmay also be referenced as

Excelliance MOS Co., Ltd.

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