EAIST3045A1 Everlight

High Power Infrared LED EAIST3045A1 Features Small package with high efficiency Peak wavelength p = 850nm Soldering methods :SMT Thermal resistance (junction to lead): 18/W. Pb free The product itself will remain within RoHS compliant version. Description EAIST3045A1 series is an infrared emitting diode in miniature SMD package which is molded in a water clear silicone with spherical top view lens. The device is spectrally matched with silicon photodiode, Phototransistor. Applications CCD Camera Infrared applied system Copyright 2010, Everlight Americas Inc. All Rights Reserved. Release Date : 02.02.2016. Issue No: 1 www.everlightamericas.com DIR-0001563 DATASHEET High Power Infrared LED EAIST3045A1 Device Selection Guide Chip Emitted Color Resin Color Materials AlGaAs Infrared Water Clear Absolute Maximum Ratings (Ta=25 ) Parameter Symbol Rating Unit I 500 mA Continuous Forward Current F Peak Forward Current *1 IFP 1.0 A Reverse Voltage VR 5 V Operating Temperature Topr -40~ +85 Storage Temperature Tstg -40 ~ +100 Junction temperature Tj 115 C Thermal resistance Rth(j-L) 18 /W (junction to leadframe) Power Dissipation @IF=500mA Pd 1 W Notes: *1:I Conditions--Pulse Width 100s and Duty1%. FP *2Note: We suggest that customer should add the heat sink with EAIST3045A1 to exclude the heat. Copyright 2010, Everlight Americas Inc. All Rights Reserved. Release Date : 02.02.2016. Issue No: 2 www.everlightamericas .com DIR-0001563