MR4A16BYS35 Everspin

MR4A16BYS35 electronic component of Everspin
MR4A16BYS35 Everspin
MR4A16BYS35 MRAM
MR4A16BYS35  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MR4A16BYS35 MRAM across the USA, India, Europe, Australia, and various other global locations. MR4A16BYS35 MRAM are a product manufactured by Everspin. We provide cost-effective solutions for MRAM, ensuring timely deliveries around the world.

Part No. MR4A16BYS35
Manufacturer: Everspin
Category: MRAM
Description: MRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
Datasheet: MR4A16BYS35 Datasheet (PDF)
Price (USD)
12: USD 27.3 ea
Line Total: USD 327.6 
Availability : 0
  
QtyUnit Price
12$ 27.3

Availability 169
Ship by Thu. 18 Sep to Mon. 22 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 41.041
10$ 38.357
25$ 37.125
50$ 36.19
108$ 35.684
216$ 35.167
540$ 34.672


Availability 11
Ship by Mon. 22 Sep to Fri. 26 Sep
MOQ : 12
Multiples : 12
QtyUnit Price
12$ 27.3

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MR4A16BYS35 from our MRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MR4A16BYS35 and other electronic components in the MRAM category and beyond.

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MR4A16B 1M x 16 MRAM FEATURES +3.3 Volt power supply Fast 35 ns read/write cycle SRAM compatible timing Unlimited read & write endurance Data always non-volatile for >20 years at temperature RoHS-compliant small footprint BGA and TSOP2 package All products meet MSL-3 moisture sensitivity level BENEFITS One memory replaces FLASH, SRAM, EEPROM and BBSRAM in systems for simpler, more efficient designs Improves reliability by replacing battery-backed SRAM INTRODUCTION The MR4A16B is a 16,777,216-bit magnetoresistive random access memory RoHS (MRAM) device organized as 1,048,576 words of 16 bits. The MR4A16B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20 years. Data is automatically pro- tected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. To simplify fault tolerant design, the MR4A16B includes internal single bit error correction code with 7 ECC parity bits for every 64 data bits. The MR4A16B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR4A16B is available in a small footprint 48-pin ball grid array (BGA) package and a 54-pin thin small outline package (TSOP Type 2). These packages are compatible with similar low-power SRAM products and other nonvolatile RAM products. The MR4A16B provides highly reliable data storage over a wide range of temperatures. The product is offered with commercial temperature (0 to +70 C), and industrial temperature (-40 to +85 C) operating temperature options. CONTENTS 1. DEVICE PIN ASSIGNMENT......................................................................... 3 2. ELECTRICAL SPECIFICATIONS................................................................. 4 3. TIMING SPECIFICATIONS.......................................................................... 7 4. ORDERING INFORMATION....................................................................... 12 5. MECHANICAL DRAWING.......................................................................... 13 6. REVISION HISTORY...................................................................................... 15 How to Reach Us.............................................................................................. 16 Copyright 2018 Everspin Technologies, Inc. 1 MR4A16B Rev. 11.7 3/2018MR4A16B 1. DEVICE PIN ASSIGNMENT Figure 1.1 Block Diagram OUTPUT UPPER BYTE OUTPUT ENABLE G ENABLE BUFFER LOWER BYTE OUTPUT ENABLE 10 UPPER A 19:0 ADDRESS 8 BYTE 10 ROW BUFFER COLUMN 20 OUTPUT DECODER 8 DECODER BUFFER SENSE CHIP E LOWER AMPS 8 16 ENABLE BYTE 8 OUTPUT BUFFER 1M x 16 BUFFER BIT UPPER MEMORY 8 BYTE WRITE DQU 15:8 W 8 ARRAY WRITE ENABLE DRIVER FINAL BUFFER 16 WRITE 8 LOWER DRIVERS 8 BYTE DQL 7:0 WRITE UB DRIVER UB UPPER BYTE WRITE ENABLE BYTE ENABLE LB LB BUFFER LOWER BYTE WRITE ENABLE Table 1.1 Pin Functions Signal Name Function A Address Input E Chip Enable W Write Enable G Output Enable UB Upper Byte Enable LB Lower Byte Enable DQ Data I/O V Power Supply DD V Ground SS DC Do Not Connect NC No Connection Copyright 2018 Everspin Technologies, Inc. 2 MR4A16B Rev. 11.7 3/2018

Tariff Desc

8542.32.00 33 No ..Memory cards (other than "smart" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
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