VTE1013H Excelitas

pul Sed l a Ser diode S and infrared l edS (iredS ) Infrared Emitting Diodes (IREDs) VTE In FRARED EMITTIn G DIODES FOR HIGH-VOLuME APPLIc ATIOn S Infrared Emitting Diodes (IREDs) VTE a pplications Consumer coin readers Lottery card readers product description Position sensors joysticks IREDs are solid state light sources emitting in the near infrared part of the spectrum. The emission Safety shields wavelength is closely matched to the response peak of silicon photodiodes and phototransistors. The Encoders measure speed and direction product line provides a broad range of mounting lens and power output options. Both end and side radiating cases are available. Wide arrays of emission beam profiles are available. Devices may be op- Printers margin control erated in either CW or pulsed operating modes. Copiers monitor paper position or IREDs can be combined with Excelitas detectors or phototransistors in integrated assemblies for paper stack height optoisolators, optical switches and retro sensors. Optical isolators are useful when electrical isolation features and Benefits is required, for example to transmit control logic signals to high power switching circuits (which can End and side radiating configurations be noisy). In an optical switch an object is detected when it passes between the IRED and detector/ Selection of emission angle spread using phototransistor, for example a coin counter. In a retro sensor an object is detected when the IRED molded lenses emitted beam is reflected onto the detector/photodetector. The retro sensor is used in applications Narrow band of emitted wavelengths were the object changes the reflectance, for example detecting the end of a ply wood sheet or other Minimal heat generation manufactured material. Our core competencies include: LPE wafer growth wafer processing of the grown GaAs wafers Low power consumption assembly using either epoxy die attach epoxy encapsulation of the IRED LEDs on lead frame her- metically sealed package. Product Table infrared emitting Diodes (iReDs) Vt e Radiant Total Forward Test Forward Max Pulsed Beam Angle Part n umber Package Irradiance Distance Diameter Intensity Peak Power c urrent Voltage Drop Forward c urrent Wavelength FWHM Symbol E t y p . I min. P CW / Pulsed V m a x I m a x e e O f F 2 u nit mW/cm mm mm mW/sr mW mA V mA nm Degrees Vt e1013H TO-46 2.7 36 6.4 27 30 1000 2.5 3000 940 35 Vt e1063H TO-46 5.0 36 6.4 49 80 1000 3.5 3000 880 35 Vt e1113H TO-46 15 36 6.4 156 30 1000 2.5 3000 940 10 Vt e1291-1H T-1 (5 mm) 3.3 36 6.4 32 20 100 2.0 2500 880 12 Vt e1291-2H T-1 (5 mm) 6.5 36 6.4 65 25 100 2.0 2500 880 12 Vt e1291W-1H T-1 (5 mm) 1.6 36 6.4 16 20 100 2.0 2500 880 25 Vt e1291W-2H T-1 (5 mm) 3.3 36 6.4 32 25 100 2.0 2500 880 25 Vt e1295H T-1 (5 mm) 5.5 36 6.4 39 20 100 2.0 2500 880 8 Vt e3322LAH T-1 (3 mm) 1.3 10.16 2.1 1.0 1.5 20 1.6 3000 940 10 Vt e3324LAH T-1 (3 mm) 2.6 10.16 2.1 2.0 2.5 20 1.6 3000 940 10 Vt e7172H Lateral 4.57 x 1.65 mm 0.6 16.7 4.6 1.1 2.5 20 1.8 2500 880 25 Vt e7173H Lateral 4.57 x 1.65 mm 0.8 16.7 4.6 1.7 5.0 20 1.8 2500 880 25 c R10iRD SMD - - - - 6.3 50 2.05 800 770 - c R50iRDA SMD - - - - 20 50 1.8 800 870 90 c R50iRH SMD - - - - 10.6 50 1.85 800 870 90 c R50iRK SMD - - - - 11.4 50 1.7 800 950 90 www.excelitas.com 41Graph 1 Graph 2 Graph 3 on Axis Rel. irradiance t-1/Lateral Pack- o n Axis Relative irradiance Angular emission Relative Output (%) Relative Radiant Output Power (%) 100 100 100 10 10 50 1 1 0.1 0.1 0 0.1 1 10 100 0.1 1 10 100 90 60 30 0 30 60 90 Detector Emitter Spacing (mm) Detector Emitter Spacing (mm) Angle off Optical Axis VTE337XA VTE717X Inverse Square VTE106X VTE1281 / VTE1285 VTE 116X VTE1285 VTE1281 VTE 1281W VTE 1281F Figure 1 Housing / Package Drawing Vt e1291 Vte1291H .100 NOM. (2.54) Narrow beam angle T-1 bullet package Figure 2 Housing / Package Drawing Vt e1113H Vte1113H TO-46 lensed cap Figure 3 Housing / Package Drawing Vt e7172 Vte7172H Molded lateral package www.excelitas.com 42 Infrared Emitting Diodes (IREDs) VTE