X-On Electronics has gained recognition as a prominent supplier of FIR2N60ALG MOSFETs across the USA, India, Europe, Australia, and various other global locations. FIR2N60ALG MOSFETs are a product manufactured by First Semicon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FIR2N60ALG First Semicon

Name: FIR2N60ALG
Brand: First Semicon
SKU: FIR2N60ALG_First_Semicon
Availability: OutOfStock
Rating: 5 (11 reviews)

FIR2N60ALG electronic component of First Semicon

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See Product Specifications

Part No.	FIR2N60ALG
Manufacturer:	First Semicon
Category:	MOSFETs
Description:	MOSFET N Trench 600V 2A (Tc) 4V @ 250uA 4.2 Î© @ 1A,10V TO-252-2 (DPAK) RoHS
Datasheet:	FIR2N60ALG Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.2494 ea
Line Total: USD 0.25

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

FIR2N60ALG More Buying Options & Price Grid(s)

Specifications

Manufacturer First Semicon First Semicon
Product Category MOSFETs MOSFETs
Category MOSFET MOSFET
Rohs y y
Package TO - 252 - 2 (DPAK) TO - 252 - 2 (DPAK)
Brand Category First Semicon First Semicon
Fet Type n trench n trench
Drain To Source Voltagevdss 600 V 600 V
Continuous Drain Current Id @ 25°C 2 A (t C) 2 A (t C)
Vgsth Max @ Id 4v @ 250ua 4v @ 250ua
Rds On Max @ Id Vgs 4.2 @ 1a,10v 4.2 @ 1a,10v
Power Dissipation-Max Ta 35 W 35 W
Drain Source Voltage Vdss 600 V 600 V
Continuous Drain Current Id 2 A 2 A
Drain Source On Resistance Rdson@Vgs Id 4.2 Ohms @10V , 1A 4.2 Ohms @10V , 1A
Power Dissipation Pd 35 W 35 W
Gate Threshold Voltage Vgsth@Id 4 V @250uA 4 V @250uA
Type N Channel N Channel

We are delighted to provide the FIR2N60ALG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FIR2N60ALG and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The FIR2N60ALG is a two-terminal TO-252-2 (DPAK) RoHS manufactured MOSFET with a Trench technology. It is rated for 600V at 2A with a threshold voltage of 4V and a threshold current of 250uA. Its on resistance is rated at 4.2O at 1A with a maximum drain-source voltage of 10V under load condition. It is designed for low gate charge and fast switching applications. The drain-to-source breakdown voltage is guaranteed to 600V which increases the efficiency and provides a much improved noise immunity.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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