Product Information

3001048

3001048 electronic component of First Sensor

Datasheet
Photodiodes PS0.25-5 SMD (moulded 1206)

Manufacturer: First Sensor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 1

Stock Image

3001048
First Sensor

1 : USD 12.719
10 : USD 9.591
100 : USD 8.142
500 : USD 7.2565
1000 : USD 7.1645
2500 : USD 7.1645
5000 : USD 6.9805
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Peak Wavelength
Rise Time
Package / Case
Mounting Style
Dark Current
Vr - Reverse Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Brand
Noise Equivalent Power - Nep
Product Type
Responsivity
Factory Pack Quantity :
Subcategory
LoadingGif

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First Sensor PIN Photo Diode Data Sheet Part Description PS0.25-5 SMD Order 3001048 Features Description Application RoHS 500 m x 500 m active area Pulsed light detection 2011/65/EU High speed epitaxy PIN photodiode Low dark current with 0.25 mm square active area. High speed photometry Fast response time High speed optical PCB carrier type non hermetic SMD High speed epitaxy communications 1206 package with epoxy moulding. Fiber optic light monitoring Reflow solderable. Absolute maximum ratings Spectral response (23 C) Symbol Parameter Min Max Unit 0,6 T Storage temp -45 C 100 STG 0,5 T Operating temp -40 85 C OP V Max reverse voltage V max 30 0,4 I Peak DC current mA 10 PEAK 0,3 Schematic 0,2 PIN 2 0,1 0,0 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 Wavelength (nm) PIN 1 Electro-optical characteristics 23 C Symbol Characteristic Test Condition Min Typ Max Unit Active area 500 x 500 m Active area 0.25 mm I Dark current V = 20 V 0.1 nA D R C Capacitance V = 0 V 6 pF R C Capacitance V = 20 V 1.8 pF R 0.4 A/W Responsivity = 635 nm Responsivity = 800 nm 0.52 A/W t V = 20 V = 850 nm R = 50 0.4 ns Rise time R R L V Breakdown voltage I = 2 A 30 50 V BR R V = 10 mV 1000 M Shunt resistance R N.E.P. VR = 20 V = 850 nm 1.1 E-14 W/Hz Rev. 24/01/2018 subject to change without notice www.first-sensor.com contact first-sensor.com Page 1/3 Responsivity (A/W)First Sensor PIN Photo Diode Data Sheet First Sensor PIN Photo Diode Data Sheet Part Description PS0.25-5 SMD Part Description PS0.25-5 SMD Order 3001048 Order 3001048 Quantum efficiency (23 C) Capacitance as fct of reverse bias (23 C) 100 5 80 4 60 3 40 2 20 1 0 0 400 450 500 550 600 650 700 750 800 850 900 950 100010501100 0 5 10 15 20 25 30 Reverse bias (V) Wavelength (nm) Dark current as fct of bias (23 C) 1,0E-09 1,0E-10 1,0E-11 1,0E-12 0 5 10 15 20 25 30 Reverse bias (V) Application hints: Please refer to documentInstructions for handling and processin Rev. 24/01/2018 subject to change without notice www.first-sensor.com contact first-sensor.com Page 2/3 Dark current (A) Quantum efficiency (%) Capacitance (pF)

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
FIRST SENSOR / SENSORTECHNICS

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