Product Information

3001212

3001212 electronic component of First Sensor

Datasheet
Photodiodes PC0.7-i TO TO52S1

Manufacturer: First Sensor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 104.0558 ea
Line Total: USD 104.0558

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Thu. 11 Apr to Mon. 15 Apr

MOQ : 1
Multiples : 1

Stock Image

3001212
First Sensor

1 : USD 104.0558
10 : USD 93.4393
100 : USD 92.2094
500 : USD 89.9978

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Peak Wavelength
Rise Time
Package / Case
Mounting Style
Dark Current
Vr - Reverse Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Brand
Product Type
Responsivity
Factory Pack Quantity :
Subcategory
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First Sensor InGaAs PIN Data Sheet Part Description PC0.7-i TO Order 3001212 500011 550011017721 5 301020713212 on request Features Description Application RoHS InGaAs technology Precision photometry 2011/65/EU Low dark current InGaAs PIN photodiode with circular 0.7 mm Analytical instruments 0.7 mm PIN detector active area. Metal can type hermetic High sensitivity up to 1700 nm Medical equipment Low dark current TO52 package with clear glass Pulsed light detector Eyesafe laser light detector window. Absolute maximum ratings Spectral response Symbol Parameter Min Max Unit 1,2 T Storage temp -40 C 85 STG 1,0 T Operating temp -20 85 C OP V Max reverse voltage 20 V max 0,8 I Peak DC current mA PEAK 10 0,6 Schematic 3001212 Schematic TO52S3 0,4 PIN 3 PIN 2 0,2 PIN 4 PIN 2 0,0 800 900 1000 1100 1200 1300 1400 1500 1600 1700 Wavelength (nm) PIN 1 PIN 1 Electro-optical characteristics 23C Symbol Characteristic Test Condition Min Typ Max Unit diameter 950 m Active area Active area 0.71 mm I Dark current V = 5 V 1 10 nA D R C V = 0 V 140 200 pF Capacitance R V = 5 V 70 100 pF R 0.02 0.05 A/W Responsivity = 650 nm = 850 nm 0.10 0.20 A/W = 1310 nm 0.80 0.90 A/W 0.85 0.95 A/W = 1550 nm t Rise time V = 5 V = 1550 nm R = 50 15 ns R R L V = 5 mV 25 80 M Shunt Resistance R Saturation power V = 0 V = 1550 nm R = 50 -3 dbm R L D* Detectivity V = 0 V = 1550 nm R = 50 2.5 E12 5 E12 Jones R L V I = 2 A 20 30 V Breakdown voltage BR R Rev. 13/02/2018 subject to change without notice www.first-sensor.com contact first-sensor.com Page 1/3 Responsivity (A/W)First Sensor InGaAs PIN Data Sheet First Sensor InGaAs PIN Data Sheet Part Description PC0.7-i TO Part Description PC0.7-i TO Order 3001212 Order 3001212 Quantum efficiency (23 C) Capacitance as fct of reverse bias (23 C) 100 140 90 80 120 70 100 60 80 50 40 60 30 40 20 20 10 0 0 800 900 1000 1100 1200 1300 1400 1500 1600 1700 0 1 2 3 4 5 Reverse bias (V) Wavelength (nm) Dark current as fct of bias (23 C) 1,0E-09 1,0E-10 0 1 2 3 4 5 Reverse bias (V) Rev. 13/02/2018 subject to change without notice www.first-sensor.com contact first-sensor.com Page 2/3 Quantum efficiency (%) Dark current (A) Capacitance (pF)

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
FIRST SENSOR / SENSORTECHNICS

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