Product Information

AD1100-8-TO52-S1

AD1100-8-TO52-S1 electronic component of First Sensor

Datasheet
Photodiodes High Speed Si APD 130um Active Area

Manufacturer: First Sensor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 10
Multiples : 10

Stock Image

AD1100-8-TO52-S1
First Sensor

10 : USD 102.0483
100 : USD 100.7109
500 : USD 98.3032
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Peak Wavelength
Rise Time
Half Intensity Angle Degrees
Package / Case
Series
Mounting Style
Dark Current
Vr - Reverse Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Height
Length
Packaging
Type
Width
Brand
Noise Equivalent Power - Nep
Pd - Power Dissipation
Photocurrent
Product Type
Responsivity
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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First Sensor APD Data Sheet Part Description AD1100-8 TO Order 501117 Version 20-06-11 Features Description Application RoHS APD with 1.0 mm active area Laser range finder 2002/95/EC Circular active area APD chip with 1130 m diameter active area 1130 m diameter. Metal can type High speed photometry High gain at low bias voltage hermetic TO52 package with clear High speed optical glass window. Fast rise time, low capacitance communications Optimum gain: 50-60 Medical equipment Absolute maximum ratings Spectral response (M = 100) Symbol Parameter Min Max Unit 60 T Storage temp -55 125 C STG 50 Operating temp -40 C T 100 OP M Gain (I = 1 nA) 200 max P0 40 I Peak DC current 0.25 mA PEAK 30 Schematic 20 PIN 1 10 PIN 4 0 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 Wavelength (nm) PIN 3 Electro-optical characteristics 23 C Symbol Characteristic Test Condition Min Typ Max Unit Active area diameter 1130 m 1.0 mm Active area I Dark current M = 100 4.0 8.0 nA D C 8.0 pF Capacitance M = 100 Responsivity 45 50 A/W M = 100 = 800 nm t 1.0 ns Rise time R M = 100 = 905 nm R = 50 L Cut-off frequency -3dB 0.35 GHz V Breakdown voltage 80 150 240 V BR I = 2 A, V - binning available R BR Temperature coefficiant 0.45 V/K Change of V with temperature BR Excess noise factor M = 100 2.2 Excess noise index M = 100 0.2 European, International Sales: First Sensor AG First Sensor Inc. USA: Peter-Behrens-Strasse 15 5700 Corsa Avenue 105 12459 Berlin Westlake Village Germany CA 91362 USA T +49 30 6399 2399 T +1 818 706 3400 F +49 30 639923-752 F +1 818 889 7053 sales.opto first-sensor.com sales.us first-sensor.com Responsivity (A/W)First Sensor APD Data Sheet First Sensor APD Data Sheet Part Description AD1100-8 TO Part Description AD1100-8 TO Order 501117 Order 501117 Version 20-06-11 Version 20-06-11 Quantum efficiency (23 C) Capacitance as fct of reverse bias (23 C) 100,0 150 140 130 80,0 120 110 100 60,0 90 80 70 40,0 60 50 40 20,0 30 20 10 0,0 0 400 450 500 550 600 650 700 750 800 850 900 950 100010501100 0 10 20 30 40 50 60 Reverse bias (V) Wavelength (nm) Multiplication as fct of bias (23 C) Dark current as fct of bias (23 C) 1.000 1,0E-08 100 1,0E-09 10 1,0E-10 1 1,0E-11 20 30 40 50 60 70 80 90 100 110 120 130 140 150 20 30 40 50 60 70 80 90 100 110 120 130 140 150 Reverse bias V Reverse bias V Application hints: Bias supply voltage Current should be limited by a protecting resistor or current limiting - IC Current limiting resistor inside the power supply For low light level applications blocking of ambient light should be used For high gain applications bias voltage should be temperature compensated Please consider basic ESD protection while handling min. 0,1 F, Use low noise read-out - IC closest to APD APD For further questions please refer to documentInstructions for handling and processin Optimum gain: 50-60 Diode, protective circuit Read-out circuit or f.e. 50 Load resistance Package dimension: Small quantities: Foam pad, boxed (12 cm x 16.5 cm) Disclaimer: Due to our strive for continuous improvement, specifications are subject to change within our PCN policy according to JESD46C. European, International Sales: First Sensor AG First Sensor Inc. USA: Peter-Behrens-Strasse 15 5700 Corsa Avenue 105 12459 Berlin Westlake Village Germany CA 91362 USA T +49 30 6399 2399 T +1 818 706 3400 F +49 30 639923-752 F +1 818 889 7053 sales.opto first-sensor.com sales.us first-sensor.com Multiplication Quantum efficiency (%) Dark current (A) Capacitance (pF)

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
FIRST SENSOR / SENSORTECHNICS

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