Product Information

AD1100-9-TO52-S1

AD1100-9-TO52-S1 electronic component of First Sensor

Datasheet
Photodiodes Si APD Enhanced for 905nm 1130um Area

Manufacturer: First Sensor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Warehouse 1

MOQ : 10
Multiples : 10

Stock Image

AD1100-9-TO52-S1
First Sensor

10 : USD 130.05
100 : USD 128.7875
500 : USD 126.9125
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Peak Wavelength
Rise Time
Half Intensity Angle Degrees
Package / Case
Series
Mounting Style
Dark Current
Vr - Reverse Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Height
Length
Packaging
Type
Width
Brand
Noise Equivalent Power - Nep
Pd - Power Dissipation
Photocurrent
Responsivity
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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First Sensor APD Data Sheet Part Description AD1100-9 TO Order 501197 Version 20-06-11 Features Description Application RoHS APD with 1.0 mm active area Laser range finder 2002/95/EC Circular active area APD chip with Slow multiplication curve NIR enhanced sensitivity. Metal can High speed photometry QE > 80% 750 nm-910 nm type hermetic TO52 package with High speed optical clear glass window. Fast rise time, low noise communications Optimum gain: 50-60 Medical equipment Absolute maximum ratings Spectral response (M = 100) Symbol Parameter Min Max Unit 70 T Storage temp -55 125 C STG 60 Operating temp -40 C T 100 OP 50 M Gain (I = 1 nA) 200 max P0 I Peak DC current 0.25 mA PEAK 40 30 Schematic 20 PIN 1 10 PIN 4 0 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 Wavelength (nm) PIN 3 Electro-optical characteristics 23 C Symbol Characteristic Test Condition Min Typ Max Unit Active area diameter 1130 m Active area 1.0 mm I 4.0 10.0 nA Dark current M = 100 D C Capacitance M = 100 3.0 pF 52 58 60 A/W Responsivity M = 100 = 905 nm t Rise time 1.3 ns R M = 100 = 905 nm R = 50 L 0.3 GHz Cut-off frequency -3dB V Breakdown voltage 160 150 240 V BR I = 2 A, V - binning available R BR 1.25 1.55 V/K Temperature coefficiant Change of V with temperature BR Excess noise factor M = 100 2.5 0.2 Excess noise index M = 100 European, International Sales: First Sensor AG USA: First Sensor Inc. Peter-Behrens-Strasse 15 5700 Corsa Avenue 105 12459 Berlin Westlake Village Germany CA 91362 USA T +49 30 6399 2399 T +1 818 706 3400 F +49 30 639923-752 F +1 818 889 7053 sales.opto first-sensor.com sales.us first-sensor.com Responsivity (A/W)First Sensor APD Data Sheet First Sensor APD Data Sheet Part Description AD1100-9 TO Part Description AD1100-9 TO Order 501197 Order 501197 Version 20-06-11 Version 20-06-11 Quantum efficiency (23 C) Capacitance as fct of reverse bias (23 C) 100 140 120 80 100 60 80 60 40 40 20 20 0 0 400 500 600 700 800 900 1000 1100 0 10 20 30 40 50 60 Reverse bias (V) Wavelength (nm) Multiplication as fct of bias (23 C) Dark current as fct of bias (23 C) 1.000 1,0E-07 100 1,0E-08 10 1,0E-09 1 1,0E-10 20 40 60 80 100 120 140 160 180 200 220 20 40 60 80 100 120 140 160 180 200 220 Reverse bias (V) Reverse bias (V) Application hints: Bias supply voltage Current should be limited by a protecting resistor or current limiting - IC Current limiting resistor inside the power supply For low light level applications blocking of ambient light should be used For high gain applications bias voltage should be temperature compensated Please consider basic ESD protection while handling min. 0,1 F, closest to APD Use low noise read-out - IC APD For further questions please refer to documentInstructions for handling and processin Optimum gain: 50-60 Diode, protective circuit Read-out circuit or f.e. 50 Load resistance Package dimension: Small quantities: Foam pad, boxed (12 cm x 16.5 cm) Disclaimer: Due to our strive for continuous improvement, specifications are subject to change within our PCN policy according to JESD46C. European, International Sales: First Sensor AG USA: First Sensor Inc. Peter-Behrens-Strasse 15 5700 Corsa Avenue 105 12459 Berlin Westlake Village Germany CA 91362 USA T +49 30 6399 2399 T +1 818 706 3400 F +49 30 639923-752 F +1 818 889 7053 sales.opto first-sensor.com sales.us first-sensor.com Multiplication Quantum efficiency (%) Dark current (A) Capacitance (pF)

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
FIRST SENSOR / SENSORTECHNICS

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