Product Information

PS100-6-CER2PIN

PS100-6-CER2PIN electronic component of First Sensor

Datasheet
Photodiodes Low Dark Current 10x10mm Area

Manufacturer: First Sensor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

PS100-6-CER2PIN
First Sensor

1 : USD 98.4438
10 : USD 88.5393
100 : USD 87.3882
500 : USD 85.2923
25000 : USD 85.2802
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Reverse Voltage
Peak Wavelength
Rise Time
Half Intensity Angle Degrees
Package / Case
Series
Dark Current
Vr - Reverse Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Noise Equivalent Power - Nep
Photocurrent
Responsivity
Factory Pack Quantity :
Height
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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First Sensor PIN PD Data Sheet Part Description PS100-6 THD Order 3001054 Features Description Application RoHS 100 mm PIN detector Precision photometry 2011/65/EU Low dark current PIN photodiode Low dark current Analytical instruments with 100 mm square active area. High shunt resistance Medical equipment Non-hermetic ceramic carrier High sensitivity Fluorescence detector package with glass window. Epoxy or silicone potting on special request. Absolute maximum ratings Spectral response (23 C) Symbol Parameter Min Max Unit 0,70 T Storage temp -40 C 125 STG 0,60 T Operating temp -40 100 C OP 0,50 V Max reverse voltage V 50 max I Peak DC current 10 mA PEAK 0,40 0,30 Schematic 0,20 Pin 2 0,10 0,00 350 450 550 650 750 850 950 1050 Wavelength (nm) Pin 1 Electro-optical characteristics 23 C Symbol Characteristic Test Condition Min Typ Max Unit Active area 10000 x 10000 m 100 mm Active area I Dark current V = 10 V 1 10 nA D R C V = 0 V 900 pF Capacitance R V = 10 V 160 pF R 0.4 A/W Responsivity = 632 nm = 900 nm 0.64 A/W t V = 0 V = 850 nm R = 50 2000 ns Rise time R R L V = 10 V = 850 nm R = 50 40 ns R L V = 80 V = 850 nm R = 50 10 ns R L Shunt Resistance V = 10 mV 150 M R V = 10 V = 900 nm 2.8 E-14 W/Hz N.E.P. R V Breakdown voltage I = 2 A 50 V BR R Rev. 30/01/2018 subject to change without notice www.first-sensor.com contact first-sensor.com Page 1/2 Responsivity (A/W)First Sensor PIN PD Data Sheet First Sensor PIN PD Data Sheet Part Description PS100-6 THD Part Description PS100-6 THD Order 3001054 Order 3001054 Quantum efficiency (23 C) Capacitance as fct of reverse bias (23 C) 100 800 700 80 600 500 60 400 40 300 200 20 100 0 0 350 450 550 650 750 850 950 1050 0 5 10 15 20 25 30 35 40 45 50 Reverse bias (V) Wavelength (nm) Dark current as fct of bias (23 C) Dark current as fct of temperature (10 V) 1,0E-08 1,0E-05 1,0E-06 1,0E-09 1,0E-07 1,0E-08 1,0E-10 1,0E-09 1,0E-10 1,0E-11 1,0E-11 0 5 10 15 20 25 30 30 40 50 60 70 80 90 100 Reverse bias V Temperature C Package dimension: Small quantities: Foam pad, boxed (12 cm x 16.5 cm) Handling: Please refer to documentInstructions for handling and processin Disclaimer: Due to our strive for continuous improvement, specifications are subject to change within our PCN policy according to JESD46C. Rev. 30/01/2018 subject to change without notice www.first-sensor.com contact first-sensor.com Page 2/2 Dark current (A) Quantum efficiency (%) Dark current (A) Capacitance (pF)

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
FIRST SENSOR / SENSORTECHNICS

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